Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7R640884M-FC25	Samsung	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel		3-STATE	8MX8	8M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	67108864 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
K7M161825A-HI75	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words			3.3		18	GRID ARRAY				1.27 mm	85 Cel			1MX18	1M		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						22 mm	7.5 ns
K7M321825M-HC65	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	2MX18	2M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		133 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.01 Amp	22 mm	6.5 ns
K6R1008V1B-TI12	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	20.95 mm	12 ns
K7N163601A-HI25	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words			3.3		36	GRID ARRAY				1.27 mm	85 Cel			512KX36	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	2.6 ns
K7M403625M-QC80T	Samsung	ZBT SRAM	COMMERCIAL				PLASTIC/EPOXY			CMOS		PARALLEL	SYNCHRONOUS	300 mA	131072 words		COMMON		2.5/3.3,3.3	36				SRAMs		70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD				3			100 MHz		Not Qualified	4718592 bit			e0				.03 Amp		8 ns
K6E1008C1B-S20	Samsung
K6R1004V1C-JL15	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	68 mA	262144 words		COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0				.0003 Amp		15 ns
K6X4008T1F-QB55	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G32	1					Not Qualified	4194304 bit			e3				.00001 Amp		55 ns
KM641003BLIJ-10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel		3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e0				.0007 Amp		10 ns
K7Q161864B-EC160	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words		SEPARATE		1.5/1.8,1.8/2.5	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	1.4 V	0 Cel		BOTTOM		R-PBGA-B165				166 MHz		Not Qualified	18874368 bit				NOT SPECIFIED	NOT SPECIFIED		.17 Amp		2.5 ns
K6E0808V1E-JL12	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		3.6 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	3 V	TTL COMPATIBLE I/O	e0				.0005 Amp	18.42 mm	12 ns
K7N803601M-QC13	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words		COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			133 MHz		Not Qualified	9437184 bit			e0				.03 Amp		4.2 ns
KM62256BLG-12L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	18.29 mm	120 ns
K7A161800A-FI22	Samsung	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	1048576 words		COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm	225 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	2.8 ns
K6X1008C2D-BB550	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32	2	5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V						.00001 Amp	20.47 mm	55 ns
KM658512LT-8	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH	e0			YES			80 ns
KM658512LR-8L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			512KX8	512K		0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH				YES			80 ns
K7R641884M-FI16T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166.66 MHz		Not Qualified	75497472 bit			e1						.5 ns
K7P801811B-HC27	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	530 mA	524288 words		COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	512KX18	512K	3.15 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE	e0				.07 Amp	22 mm	1.85 ns
KM64B4002J-15	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.03 Amp	20.96 mm	15 ns
KM6161002AJ-17	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ44,.44	16	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.01 Amp	28.58 mm	17 ns
KM6161000BLT-7L	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000015 Amp	18.41 mm	70 ns
KM736V847T-7	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words			3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	8 ns
K6R1016V1A-JC20T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	65536 words		COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel		DUAL		R-PDSO-J44						Not Qualified	1048576 bit							.005 Amp		20 ns
K7M803625A-HC10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words		COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		83 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0				.05 Amp	22 mm	10 ns
K7I323684C-FI25	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words		COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	37748736 bit			e1				.25 Amp		.45 ns
K6R1016C1C-JI10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44						Not Qualified	1048576 bit			e0				.005 Amp		10 ns
K7A161801M-QC14	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	380 mA	1048576 words		COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	138 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.03 Amp	20 mm	3.5 ns
K6F8016U3M-RB55	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words		COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	512KX16	512K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e0				.000006 Amp	18.41 mm	55 ns
K6T0908V2B-YF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	524288 bit	3 V		e0					11.8 mm	100 ns
K7N643631M-FC25	Samsung	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		COMMON		1.8/3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e0						2.6 ns
K7M161845A-FI250	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words			3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel			1MX18	1M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm		13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0					15 mm
KM616V4002BIT-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						18.41 mm	15 ns
K6T1008C2E-RF550	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V						.00001 Amp	18.4 mm	55 ns
K6F2008V2E-YF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	3 V		e0				.000002 Amp	11.8 mm	55 ns
KMM764V72G7-13	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	65536 words		COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel		3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160						Not Qualified	4194304 bit							.02 Amp		7 ns
K7M401825M-TC80	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words			3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel			256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V							20 mm	8 ns
KM718BV90J-12	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	220 mA	65536 words		COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel		3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.47 V	4.52 mm		19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0			YES	.08 Amp	19.05 mm	12 ns
KM6164002CT-1500	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	15 ns
K7R323682M-FC13	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words			1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel			1MX36	1M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE						17 mm	.5 ns
K6F8016U6D-XF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	28 mA	524288 words		COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.3 V	1 mm		6 mm	Not Qualified	8388608 bit	2.7 V		e1				.000006 Amp	7 mm	55 ns
K6X4008T1F-GQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words		COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	125 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	2.7 V		e0				.00003 Amp	20.47 mm	85 ns
K7N163601A-FI16	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	524288 words		COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	3.5 ns
K6F1008S2M-YI150	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.3 V							11.8 mm	150 ns
KM644002CIJ-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE				1.27 mm	85 Cel			1MX4	1M		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							20.96 mm	12 ns
K7A403649A-QC160	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words		COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	2.37 V	0 Cel		QUAD		R-PQFP-G100				166 MHz		Not Qualified	4718592 bit							.04 Amp		3.5 ns
K7A401849A-PC22	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	410 mA	262144 words		COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	2.37 V	0 Cel		QUAD		R-PQFP-G100				225 MHz		Not Qualified	4718592 bit							.04 Amp		2.8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.