Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6X1008C2D-PB55T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32						Not Qualified	1048576 bit							.00001 Amp		55 ns
KM616V1002BTI-80	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V							18.41 mm	8 ns
K7P161812M-HC43	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.55 mm	232.55 MHz	14 mm	Not Qualified	18874368 bit	3.15 V		e0				.15 Amp	22 mm	4.3 ns
K6F1016S3M-ZF15	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	.81 mm		6 mm	Not Qualified	1048576 bit	2.3 V							8 mm	150 ns
KM616V4002CTI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	18.41 mm	10 ns
K7S3218U4C-EC33T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	SEPARATE		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			333 MHz		Not Qualified	37748736 bit			e1		260		.3 Amp		.45 ns
KM718V889T-67	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	149 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR OR INTERLEAVED BURST	e0				.03 Amp	20 mm	3.8 ns
K7A803601M-QC100	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4.5 ns
K7R161884B-FI160	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	166 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.17 Amp	15 mm	.5 ns
K7N161801A-QC15	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			149 MHz		Not Qualified	18874368 bit			e0				.01 Amp		3.8 ns
K6R1016C1A-TI20	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							18.41 mm	20 ns
K7I323682C-EC25T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	37748736 bit			e1				.25 Amp		.45 ns
K7P403623B-HC700	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			128KX36	128K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE	e0					22 mm	7 ns
K7R643684M-FC30T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			303 MHz		Not Qualified	75497472 bit			e1						.45 ns
KM6164002AJI-20	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	BYTE READ/WRITE; TTL COMPATIBLE INPUTS/OUTPUTS	e0				.01 Amp	28.58 mm	20 ns
K6T1008C2E-GP700	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V						.000025 Amp	20.47 mm	70 ns
K6T1008V2C-GB100	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	1048576 bit	3 V							20.47 mm	100 ns
K7B803625M-HC90T	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				100 MHz		Not Qualified	9437184 bit							.12 Amp		9 ns
K6T0808V1D-RB70T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	262144 bit			e0						70 ns
K7N403609B-QC250	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX36	128K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					20 mm
K7K1618U2C-FI450	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	18874368 bit			e1		240		.4 Amp		.45 ns
K7M801825M-HC85	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	8.5 ns
KM616U4000CLRI-8L0	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V							18.41 mm	85 ns
K6F8016R6D-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel		BOTTOM		R-PBGA-B48	1					Not Qualified	8388608 bit									70 ns
K1S3216BCD-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.85	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48		2 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V			30	240		.0001 Amp	8 mm	70 ns
KM736FS4011AH-33	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	650 mA	131072 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	2.35 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V	POWER DOWN OPTION	e0				.06 Amp	22 mm	1.8 ns
KM641002BJI-10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							20.96 mm	10 ns
K7P323674C-HC300	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	620 mA	1048576 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	37748736 bit	2.37 V	PIPELINED ARCHITECTURE	e0				.07 Amp	22 mm	1.6 ns
K6T1008V2C-GF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	1048576 bit	3 V							20.47 mm	70 ns
K6T2008V2A-TF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	2097152 bit			e0						70 ns
K7N321831C-FI16T	Samsung	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	2097152 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX18	2M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	37748736 bit			e1		240		.1 Amp		3.5 ns
K7M161835B-QC650	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON	2.5	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	e0				.13 Amp	20 mm	6.5 ns
K7R643684M-EC300	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	303 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			17 mm	.45 ns
K7K3236U2C-EI45T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	1048576 words	COMMON		1.5/1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	37748736 bit			e1		260		.4 Amp		.45 ns
K7A203200B-QC25	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	64KX32	64K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	250 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	2.4 ns
K7N643645M-EC16T	Samsung	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	75497472 bit			e1		260		.13 Amp		3.5 ns
KM64258BP-20	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.002 Amp	34.29 mm	20 ns
K7A163600A-FI20	Samsung	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	3.1 ns
K7N401809B-QC20	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	2.8 ns
KM6164002BIJ-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							25.58 mm	15 ns
KM62256DLP-4	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	3					Not Qualified	262144 bit			e0				.00003 Amp		45 ns
K7M801825A-QC85T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			100 MHz		Not Qualified	9437184 bit			e0				.05 Amp		8.5 ns
K6X0808C1D-GQ550	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V							18.29 mm	55 ns
K1B3216B8E-FI70T	Samsung
K7A401809B-QC200	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	2.8 ns
K6X1008T2D-TQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V						.000025 Amp	18.4 mm	70 ns
KM6161000LT-45L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm				64KX16	64K				DUAL		R-PDSO-G40			1.2 mm		10.16 mm	Not Qualified	1048576 bit								18.41 mm	45 ns
K7A161800A-FI16	Samsung	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	3.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.