Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6F8016V3A-RF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	3 V						.000006 Amp	18.41 mm	70 ns
K7B801825B-QC850	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V		e0					20 mm	8.5 ns
KM718BV521J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm				32KX18	32K				QUAD		S-PQCC-J52			4.52 mm		19.05 mm	Not Qualified	589824 bit								19.05 mm	8 ns
K7A203600B-QC140	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			64KX36	64K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
K6T4008U1B-MF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	4194304 bit			e0						85 ns
KM691001J-25	Samsung	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE			1.27 mm				128KX9	128K				DUAL		R-PDSO-J32			3.75 mm		10.16 mm	Not Qualified	1179648 bit								20.96 mm	25 ns
K7P161866M-HC30	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.63 V	2.55 mm		14 mm	Not Qualified	18874368 bit	2.37 V		e0				.15 Amp	22 mm	1.6 ns
K6R1016V1D-FI12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48						Not Qualified	1048576 bit			e0				.001 Amp		12 ns
K7N803201B-QC13	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX32	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3.135 V		e0				.06 Amp	20 mm	4.2 ns
K6T4016U3B-TB10T	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	262144 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	4194304 bit			e0						100 ns
K6R1016V1B-C10	Samsung
K6X4008T1F-VB55	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32						Not Qualified	4194304 bit			e0				.00001 Amp		55 ns
KM6161002CLJ-15	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	28.58 mm	15 ns
KM718S4017H-44	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm			3-STATE	256KX18	256K	2.4 V			BOTTOM		R-PBGA-B153		2.6 V	2.21 mm	227 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY					.05 Amp	22 mm	2.4 ns
KM658128LDSG-10L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		8.38 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00006 Amp	20.47 mm	100 ns
KM736S4017H-4000	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm				128KX36	128K				BOTTOM		R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V							22 mm	2.4 ns
K6T2008U2A-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.7 V							18.4 mm	85 ns
K6X4016T3F-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		3-STATE	256KX16	256K	2.7 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.0003 Amp	18.41 mm	70 ns
K7A321801M-QC220	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			2MX18	2M		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	2.8 ns
K6X4008T1F-QF550	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	20.95 mm	55 ns
K6F4016U6C-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm		6.5 mm	Not Qualified	4194304 bit	2.7 V							8.5 mm	70 ns
K7P321874C-HC250	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	1.8	1.8,2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		1.9 V	2.21 mm	250 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY	e0				.07 Amp	22 mm	2 ns
K6F2008S2M-TI150	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		2.5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.3 V							18.4 mm	150 ns
K1S64161CC-BI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.9	2.9	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.1 V	1 mm		6 mm	Not Qualified	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00018 Amp	8 mm	70 ns
K6R1016C1C-JP12T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44						Not Qualified	1048576 bit			e0				.0003 Amp		12 ns
K6X1008T2D-BF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	3					Not Qualified	1048576 bit					260				55 ns
K7A201800B-QC140	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX18	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
K7N803601M-QC20	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			200 MHz		Not Qualified	9437184 bit			e0				.03 Amp		3.2 ns
KM62256DLG-4	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3					Not Qualified	262144 bit			e0				.00003 Amp		45 ns
K6F8008V2M-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX8	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		8 mm	Not Qualified	8388608 bit	3 V							12 mm	70 ns
K7R643684M-FI300	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	303 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE						17 mm	.45 ns
KM6164002AT-1500	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	15 ns
K7Q161852A-FC160	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			1MX18	1M		0 Cel		BOTTOM		R-PBGA-B165		2.6 V	1.4 mm		13 mm		18874368 bit	2.4 V	PIPELINED ARCHITECTURE						15 mm	2.5 ns
KM658128L-LP-12L-L	Samsung	STANDARD SRAM		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm				128KX8	128K				DUAL		R-PDIP-T32			5.08 mm		15.24 mm	Not Qualified	1048576 bit								41.91 mm	120 ns
K7I643684M-EC25T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e1						.45 ns
K7A203200B-QC22	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	64KX32	64K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	225 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	2.6 ns
K6X4008T1F-QB55T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G32	1					Not Qualified	4194304 bit			e3				.00001 Amp		55 ns
K7K3218T2C-EC33T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	2097152 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			333 MHz		Not Qualified	37748736 bit			e1		260		.3 Amp		.45 ns
KM616V8000R-5	Samsung
K7N163201A-QI25	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	470 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	512KX32	512K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm	250 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	20 mm	2.6 ns
KM616BV4002J-10	Samsung	STANDARD SRAM		44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			1.27 mm				256KX16	256K				DUAL		R-PDSO-J44			3.76 mm		10.16 mm	Not Qualified	4194304 bit								28.58 mm	10 ns
K7N641845M-FI25T	Samsung	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	4MX18	4M	2.38 V	-40 Cel	TIN SILVER COPPER	QUAD		R-PQFP-G100				250 MHz		Not Qualified	75497472 bit			e1						2.6 ns
KM732V696LT-13	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	64KX32	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	76 MHz	14 mm	Not Qualified	2097152 bit	3.13 V		e0			YES	.001 Amp	20 mm	7 ns
K6X4008T1F-MF700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V						.00001 Amp	20.95 mm	70 ns
KM62256BL-L-10L-L	Samsung	STANDARD SRAM			DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE							32KX8	32K				DUAL		R-PDIP-T						Not Qualified	262144 bit									100 ns
K6R1016C1C-FP10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48						Not Qualified	1048576 bit			e0				.0003 Amp		10 ns
K7Q321884M-FC22	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	227 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	2.2 ns
K6T0808U1D-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.3 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V		e0					11.8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.