Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6L0908V2A-TD700	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		64KX8	64K		-25 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	524288 bit	3 V						18.4 mm	70 ns
K7A163601A-QI16	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.06 Amp	20 mm	3.5 ns
K7S3218T4C-EC400	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	SEPARATE	1.8	1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	260		.35 Amp	17 mm	.45 ns
KM644002BJI-10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			.01 Amp	20.96 mm	10 ns
K6R1016V1C-FL150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	1048576 bit				240		.0003 Amp		15 ns
K7N801845B-PC160	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	2.38 V	0 Cel		QUAD		R-PQFP-G100	2	2.625 V	1.6 mm	167 MHz	14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE				.06 Amp	20 mm	3.5 ns
KM62U256DLRG-7L0	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		3.3 V	1.2 mm		8 mm		262144 bit	2.7 V						11.8 mm	70 ns
KM616V4000BLTI-8L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0			.00002 Amp	18.41 mm	85 ns
KM718S049G-75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			133 MHz		Not Qualified	18874368 bit			e0			.03 Amp		4.2 ns
K6R1008V1B-TC10T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0			.005 Amp		10 ns
KM736V887T-7	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION	e0			.03 Amp	20 mm	7.5 ns
K1B3216B8E-BI700	Samsung
K6T4008C1C-GB55T00	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm		4194304 bit	4.5 V						20.47 mm	55 ns
K6E0808C1C-JC12T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	262144 bit			e0			.002 Amp		12 ns
KM6465LP-45	Samsung	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3		SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22	3					Not Qualified	65536 bit			e0			.00005 Amp		45 ns
K7P803666M-HC20	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	9437184 bit	2.35 V	PIPELINED ARCHITECTURE					22 mm	2.5 ns
KM6465BLP-12	Samsung	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3		SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0		NO	.00005 Amp	26.745 mm	12 ns
K7D163671B-HC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1	2.63 V	2.21 mm	375 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE					22 mm	.2 ns
KM641001J-25	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44		SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.002 Amp	18.42 mm	25 ns
K7A403609B-QC25	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	250 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.05 Amp	20 mm	2.4 ns
K7S1636U4C-FI40T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	524288 words	SEPARATE		1.5,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	18874368 bit			e1	240		.35 Amp		.45 ns
KM718V789AT-50	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	SELF-TIMED WRITE CYCLE	e0			.02 Amp	20 mm	3.1 ns
K6F8016R6M-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		8 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 1.8 V					12 mm	85 ns
KM6466B-12	Samsung	STANDARD SRAM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE							16KX4	16K				DUAL		R-PDIP-T24						Not Qualified	65536 bit								12 ns
K7M403625A-QC750	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100				117 MHz		Not Qualified	4718592 bit						.05 Amp		7.5 ns
K7D401871M-HC22T	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50		SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM		R-PBGA-B153				227 MHz		Not Qualified	4718592 bit						.05 Amp
KM62256BLPI-12L	Samsung	STANDARD SRAM		28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm			32KX8	32K				DUAL		R-PDIP-T28			5.08 mm		15.24 mm	Not Qualified	262144 bit							36.32 mm	120 ns
K6T2008U2A-YF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	2097152 bit			e0					70 ns
KMCJ616512-15	Samsung	NON-VOLATILE SRAM	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	1MX8	1M		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V				Not Qualified	8388608 bit	4.75 V				YES			150 ns
K7N401801M-QC15T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100				150 MHz		Not Qualified	4718592 bit						.03 Amp		3.8 ns
K7P801822B-HC25	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B153		3.45 V	2.2 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0			.12 Amp	22 mm	2.3 ns
K7R161884B-FC25T	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE				.21 Amp	15 mm	.45 ns
K7N323601M-FC200	Samsung	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel		BOTTOM		R-PBGA-B165		3.465 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE					17 mm	3.2 ns
K6L0908U2A-TB85T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	524288 bit			e0					85 ns
K7J643682M-FC30	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			303 MHz		Not Qualified	75497472 bit			e0					.45 ns
K7A401800M-QC11T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			117 MHz		Not Qualified	4718592 bit			e0			.03 Amp		4 ns
K7N323601M-FC13	Samsung	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0				17 mm	4.2 ns
K6T2016U3M-TF85	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V						18.41 mm	85 ns
KM64V4002BJI-15	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	20.96 mm	15 ns
KM641003AJ-17	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0		YES	.008 Amp	20.96 mm	17 ns
K7A803200B-QC16	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3.135 V		e0			.06 Amp	20 mm	3.5 ns
K6T4016U3B-TB850	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V						18.41 mm	85 ns
K7N163645A-QI160	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel		512KX36	512K		-40 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE					20 mm	3.5 ns
KM736V795-85	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	ONCHIP ADDRESS COUNTER; SELF TIMED WRITE CYCLE					20 mm	4 ns
K6X8016C3B-UF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	2 V	-40 Cel		DUAL		R-PDSO-G44	2	5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V					.000025 Amp	18.41 mm	55 ns
K7N801845A-QC13T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	512KX18	512K	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			133 MHz		Not Qualified	9437184 bit			e0			.01 Amp		4.2 ns
K7N803601B-PI160	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	2	3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE				.06 Amp	20 mm	3.5 ns
K7B201825B-QI800	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX18	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					20 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.