Samsung SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7I643682M-FI16	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	1			166 MHz		Not Qualified	75497472 bit									.5 ns
K7N323631C-QI160	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	1048576 words	COMMON	2.5	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	1MX36	1M	2.38 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	166 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT 3.3V.	e0				.1 Amp	20 mm	3.5 ns
KM6161000BLR-7L	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	YES	3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000015 Amp	18.41 mm	70 ns
K6T4016U3C-RB850	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V							18.41 mm	85 ns
K6T8008C2M-RF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	1MX8	1M	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V		e0					18.41 mm	70 ns
K6T4016V4C-ZF10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	.94 mm		6.1 mm	Not Qualified	4194304 bit	3 V							8.9 mm	100 ns
K7B323625M-QC75	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX36	1M	3.135 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	37748736 bit	3.135 V		e0			YES	.13 Amp	20 mm	7.5 ns
K7N401801B-QI160	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel			256KX18	256K		-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					20 mm	3.5 ns
KM62256CLRGI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	11.8 mm	70 ns
KM641005P-25	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	SEPARATE	5	5	4	IN-LINE	DIP32,.4	SRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			NO	.002 Amp	42.105 mm	25 ns
K7K1618U2C-FI330	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			333 MHz		Not Qualified	18874368 bit			e1		240		.3 Amp		.45 ns
K7N401809B-PI20	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED		.05 Amp	20 mm	2.8 ns
KM62V256CL-LP-10L-L	Samsung	STANDARD SRAM			DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	IN-LINE							32KX8	32K				DUAL		R-PDIP-T						Not Qualified	262144 bit									100 ns
KM736S8011H-5A	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	2.35 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	9437184 bit	2.35 V		e0				.06 Amp	22 mm	2 ns
K7I323684C-EC30T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	37748736 bit			e1				.28 Amp		.45 ns
K7R640982M-FI25	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	8MX9	8M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e1						.45 ns
KM6264AP-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0				.001 Amp		100 ns
K6X8016C3B-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	8388608 bit							.000025 Amp		55 ns
K7A161800M-PL16	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	1048576 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel		QUAD		R-PQFP-G100				166 MHz		Not Qualified	18874368 bit							.03 Amp		3.5 ns
K7N803645A-PC16	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	2.38 V	0 Cel		QUAD		R-PQFP-G100				166 MHz		Not Qualified	9437184 bit							.04 Amp		3.5 ns
K6E0808C1E-TL10	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O	e0				.0005 Amp	11.8 mm	10 ns
K7N801809A-QC18	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	183 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e0				.01 Amp	20 mm	3.3 ns
K7N161831B-EI25T	Samsung	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	1048576 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	3.14 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B165	1			250 MHz		Not Qualified	18874368 bit			e3				.13 Amp		2.6 ns
K6F1016U4C-EF70T	Samsung
K6R1008C1C-JL20	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0003 Amp	20.96 mm	20 ns
KM62256CLP-8	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	36.32 mm	85 ns
KM64V1003CLJI-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel			256KX4	256K		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V							20.96 mm	12 ns
KM62V256DLTG-7L0	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm		8 mm		262144 bit	3 V							11.8 mm	70 ns
K6T1008U2E-YF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	70 ns
K6X4008T1F-BB850	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	20.47 mm	85 ns
K6R1008V1B-J10	Samsung
K6F8016U3A-TB550	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			512KX16	512K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V							18.41 mm	55 ns
K6T0808U1D-RD10T	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	262144 bit			e0						100 ns
KM611001-20	Samsung	STANDARD SRAM		28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		1	IN-LINE							1MX1	1M				DUAL		R-PDIP-T28						Not Qualified	1048576 bit									20 ns
K7I163684B-EI20T	Samsung	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm			3-STATE	512KX36	512K	1.7 V		TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	18874368 bit			e1				.19 Amp		.45 ns
KM616V1002AJI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	28.58 mm	12 ns
K7A403600A-TC15	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V							20 mm	3.8 ns
K7S3236T4C-EI33T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	1048576 words	SEPARATE		1.5,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			333 MHz		Not Qualified	37748736 bit			e1		260		.3 Amp		.45 ns
K6X8008C2B-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			1MX8	1M		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V							18.41 mm	55 ns
K7R320984C-EC25T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	4MX9	4M	1.7 V	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B165	1			250 MHz		Not Qualified	37748736 bit			e3				.3 Amp		.45 ns
K7A161800A-QC250	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			1MX18	1M		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	2.6 ns
KM732V595ALT-7	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	270 mA	32768 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.47 V	1.6 mm	133 MHz	14 mm	Not Qualified	1048576 bit	3.13 V	LINEAR OR INTERLEAVED BURST	e0				.0005 Amp	20 mm	4.8 ns
K6R1008C1B-TC12T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0				.01 Amp		12 ns
K6L0908U2A-GB850	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3		8	SMALL OUTLINE			1.27 mm	70 Cel			64KX8	64K		0 Cel		DUAL		R-PDSO-G32		3.3 V	3 mm		11.43 mm	Not Qualified	524288 bit	2.7 V							20.47 mm	85 ns
K6L0908V2A-TB850	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			64KX8	64K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	524288 bit	3 V							18.4 mm	85 ns
K6T4008C1B-MF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					20.95 mm	55 ns
KM718FV4011H-600	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm		4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED						22 mm	3 ns
K6R1004V1C-JP20	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX4	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0				.0003 Amp		20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.