Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7R641882M-FI16T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165				166 MHz		Not Qualified	75497472 bit			e1						.5 ns
K7B401825B-QI75T	Samsung	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN SILVER COPPER	QUAD		R-PQFP-G100				117 MHz		Not Qualified	4718592 bit			e1				.05 Amp		7.5 ns
KM616V1002BLJI-1	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V							25.58 mm	10 ns
K6F8016R6D-XF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3					Not Qualified	8388608 bit			e1		260				70 ns
K7M401825A-QC65T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100				133 MHz		Not Qualified	4718592 bit							.05 Amp		6.5 ns
K6T1008C2C-DL550	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	55 ns
KM718FV4011H-44	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V		e0			YES	.06 Amp	22 mm	2.2 ns
K7R643682M-FC20	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			200 MHz		Not Qualified	75497472 bit			e0						.45 ns
K7N803601A-HC160	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	3.5 ns
KM616FS1000RI-12L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON		2.3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	1048576 bit			e0				.000001 Amp		120 ns
KM616U4000BLT-8L	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000015 Amp	18.41 mm	85 ns
K6X8008T2B-UQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		3-STATE	1MX8	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00008 Amp	18.41 mm	70 ns
K7N323645M-QC22	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX36	1M	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	225 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.06 Amp	20 mm	2.8 ns
K7M401825A-QC80T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100				100 MHz		Not Qualified	4718592 bit							.05 Amp		8 ns
KM62256CLG-85L	Samsung	STANDARD SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm				32KX8	32K				DUAL		R-PDSO-G28			3 mm		8.38 mm	Not Qualified	262144 bit								18.29 mm	85 ns
K6T1008U2C-TB850	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V							18.4 mm	85 ns
K7A801809B-PI25T	Samsung	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	470 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	1			250 MHz		Not Qualified	9437184 bit			e3				.06 Amp		2.6 ns
K7A163280A-QI25	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		1.8		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		1.95 V	1.6 mm		14 mm	Not Qualified	16777216 bit	1.7 V							20 mm	2.6 ns
K7R163682B-EI160	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			512KX36	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1					15 mm	.5 ns
K7D161871B-HC30T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			300 MHz		Not Qualified	18874368 bit							.1 Amp		1.9 ns
K1B1616B2B-HI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit			e3						70 ns
K7I321884M-FC20T	Samsung
K7N801809B-PI25T	Samsung	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	470 mA	524288 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	1			250 MHz		Not Qualified	9437184 bit			e3				.06 Amp		2.6 ns
K7A161800M-HL14	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			138 MHz		Not Qualified	18874368 bit			e1				.03 Amp		4 ns
K6E0808C1E-JC12T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	262144 bit			e0				.002 Amp		12 ns
KM64V4002BLJ-10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.0007 Amp	20.96 mm	10 ns
K7R643682M-EC25	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e1						.45 ns
K6F3216R6M-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B55		1.95 V	1 mm		7.5 mm	Not Qualified	33554432 bit	1.65 V							12 mm	85 ns
K6F4016V6C-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6.5 mm	Not Qualified	4194304 bit	3 V		e0				.000003 Amp	8.5 mm	70 ns
K7J163682B-EI16T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	18874368 bit			e1				.17 Amp		.5 ns
K7A403601A-QC15	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	390 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	3.8 ns
K6T1008V2C-TB70	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3 V							18.4 mm	70 ns
K7N321801M-HC150	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel			2MX18	2M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.8 ns
KM718V989G-50	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	490 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			200 MHz		Not Qualified	9437184 bit			e0				.03 Amp		3.1 ns
K7A201800B-QI20	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	128KX18	128K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	2.8 ns
K6R1016C1D-UI100	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44	2	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V			40	260			18.41 mm	10 ns
K1B6416B2D-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54	1	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V						.00012 Amp	8 mm	70 ns
K7B201825A-QC75	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	8	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX8	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0				.02 Amp	20 mm	7.5 ns
KM691001-25	Samsung	STANDARD SRAM		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		9	IN-LINE							128KX9	128K				DUAL		R-PDIP-T32						Not Qualified	1179648 bit									25 ns
K7A163280A-QI22	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		1.8		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		1.95 V	1.6 mm		14 mm	Not Qualified	16777216 bit	1.7 V							20 mm	2.8 ns
K7A163630B-PC16	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	1			167 MHz		Not Qualified	18874368 bit			e3				.13 Amp		3.5 ns
K7N161801A-QI25	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	470 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	250 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	20 mm	2.6 ns
K7R641882M-EI20T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	75497472 bit			e1						.45 ns
K7I321884C-EI300	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1				.28 Amp	17 mm	.45 ns
K7M163225A-QI750	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel			512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	16777216 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	7.5 ns
K6R1008C1C-C15	Samsung
K6T1008C2E-TF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0				.00001 Amp		70 ns
K7A803601A-PC15	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	410 mA	262144 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100				150 MHz		Not Qualified	9437184 bit							.05 Amp		3.8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.