Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7N801845A-QC10	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	512KX18	512K	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			100 MHz		Not Qualified	9437184 bit			e0				.01 Amp		5 ns
K6T4008C1C-GL550	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V							20.47 mm	55 ns
KM62256CL-5L	Samsung	STANDARD SRAM			DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE						32KX8	32K				DUAL		R-PDIP-T						Not Qualified	262144 bit									55 ns
K6T1008U2C-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V							18.4 mm	85 ns
KM62256BLT-10L	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	12.4 mm	100 ns
K6E1004C1B-JL15T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	1048576 bit			e0				.0004 Amp		15 ns
K7S1636T4C-FI400	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	524288 words	SEPARATE	1.8	1.5,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					.35 Amp	17 mm	.45 ns
K7N323645M-FC25	Samsung	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.625 V	1.4 mm		15 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0					17 mm	2.6 ns
K6R1008C1B-JC8	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0				.01 Amp		8 ns
K7R163684B-FC33	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
K6R1016V1C-JI20T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44						Not Qualified	1048576 bit			e0				.005 Amp		20 ns
K7I641884M-EC30T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit			e1						.45 ns
K7I323682C-FI330	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.3 Amp	17 mm	.45 ns
K7P163666M-HC330	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel		BOTTOM		R-PBGA-B119		2.63 V	2.55 mm		14 mm		18874368 bit	2.37 V	SEATED HGT-CALCULATED						22 mm	1.5 ns
K7R161884B-FC330	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0					15 mm	.45 ns
K6R1016V1B-TP10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	1048576 bit			e0				.0004 Amp		10 ns
KM616V1002BLT-10	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.0003 Amp	18.41 mm	10 ns
K7I641882M-FI200	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
K7K3218T2C-FC40T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	2097152 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	37748736 bit			e0		240		.35 Amp		.45 ns
K7I643682M-FI20	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	1			200 MHz		Not Qualified	75497472 bit									.45 ns
K7B163225A-QC75	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX32	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	16777216 bit	3.135 V							20 mm	7.5 ns
K7A161801M-QC160	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	1048576 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel		QUAD		R-PQFP-G100				166 MHz		Not Qualified	18874368 bit							.03 Amp		3 ns
K7R641884M-FI25S	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit			e1						.45 ns
K6E0808C1E-TL15	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.46,20	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O	e0				.0005 Amp	11.8 mm	15 ns
K6F4008R2C-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	1.8	1.8/2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		6.5 mm	Not Qualified	4194304 bit	1.65 V		e0					8.5 mm	85 ns
KM64V1003BT-8	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3					Not Qualified	1048576 bit			e0				.005 Amp		8 ns
K1S1616B1M-EI85	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e0					7 mm	85 ns
K7I323682C-EI30T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	37748736 bit			e1				.28 Amp		.45 ns
K7P801822B-HC200	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE						22 mm	2.5 ns
K7B163625M-TC90	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX36	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	SELF-TIMED WRITE CYCLE						20 mm	9 ns
KM6161002AJ-20	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS/3.3V GTL COMPATIBLE I/O	e0			YES	.01 Amp	28.58 mm	20 ns
K7I163684B-EI25T	Samsung	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm		3-STATE	512KX36	512K	1.7 V		TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	18874368 bit			e1				.21 Amp		.45 ns
KM736S849H-10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	9437184 bit	2.375 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION						22 mm	5 ns
KM6164002CTI-100	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	10 ns
K6F4008U2G-EF55	Samsung
K6T2016U3M-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V							18.41 mm	100 ns
K7N321831C-EI160	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	2097152 words	COMMON	2.5	2.5,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	2.625 V	1.4 mm	166 MHz	15 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT 3.3V.	e1				.1 Amp	17 mm	3.5 ns
K7N163601A-QI130	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX36	512K		-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0					20 mm	4.2 ns
K6R1008V1D-TC080	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	8 ns
K7A163600A-FC16	Samsung	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		3.465 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	15 mm	3.5 ns
K7Q161852A-FC16	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	1048576 words	SEPARATE	2.5	1.5/1.8,2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.4 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	2.6 V	1.4 mm	166.66 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0				.22 Amp	15 mm	2.5 ns
K6R1016V1D-UI080	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G44	2	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V							18.41 mm	8 ns
K6F2016V4A-I7	Samsung
K6L0908V2A-GB10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	524288 bit	3 V		e0					20.47 mm	100 ns
K7A801809A-QC220	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	2.8 ns
K6F1008S2A-FI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		R-PBGA-B48		2.7 V	1.2 mm		6 mm	Not Qualified	1048576 bit	2.3 V							7 mm	100 ns
KM718V087H-10	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V							22 mm	10 ns
KM64V1001BLJ-17	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	3					Not Qualified	1048576 bit			e0				.00035 Amp		17 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.