THROUGH HOLE MOUNT Photodiodes 231
| Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
.0000005 s |
Photo Diodes |
10 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
3 mm |
3 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.027 mA |
e3 |
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|
Motorola |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
4.735 mm |
2 nA |
1 |
.000000001 s |
Photo Diodes |
100 V |
Silicon |
125 Cel |
100 V |
ROUND |
-55 Cel |
RESPONDS FROM VISIBLE TO INFRARED RANGE |
.0021 mA |
e0 |
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|
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4 mm |
10 nA |
1 |
YES |
900 |
.000000007 s |
Photo Diodes |
Silicon |
125 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.06 mA |
e3 |
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|
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
6.4 mm |
30 nA |
1 |
YES |
950 |
.00000005 s |
Photo Diodes |
32 V |
GaAs |
80 Cel |
60 V |
RECTANGULAR |
-30 Cel |
HIGH SENSITIVITY |
.038 mA |
e3 |
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|
Texas Instruments |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
.15 nA |
Photo Diodes |
185 V |
Silicon |
60 Cel |
-40 Cel |
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|
Texas Instruments |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
.03 nA |
Photo Diodes |
120 V |
Silicon |
125 Cel |
-60 Cel |
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|
Texas Instruments |
THROUGH HOLE MOUNT |
SINGLE |
500 nA |
1 |
.000002 s |
Photo Diodes |
50 V |
Silicon |
125 Cel |
-60 Cel |
.1 mA |
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|
Texas Instruments |
THROUGH HOLE MOUNT |
500 nA |
.000000015 s |
Photo Diodes |
200 V |
Silicon |
125 Cel |
-60 Cel |
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|
Texas Instruments |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
.15 nA |
Photo Diodes |
120 V |
Silicon |
125 Cel |
-60 Cel |
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|
Texas Instruments |
THROUGH HOLE MOUNT |
10 nA |
.000000045 s |
Photo Diodes |
50 V |
Silicon |
125 Cel |
-60 Cel |
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|
Texas Instruments |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
.03 nA |
Photo Diodes |
120 V |
Silicon |
125 Cel |
-60 Cel |
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|
Texas Instruments |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
.15 nA |
Photo Diodes |
120 V |
Silicon |
125 Cel |
-60 Cel |
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|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
Photo Diodes |
30 V |
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|
|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
10 nA |
1 |
YES |
880 |
Photo Diodes |
50 V |
Silicon |
100 Cel |
50 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.015 mA |
e3 |
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|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
20 nA |
.00000002 s |
Photo Diodes |
30 V |
70 Cel |
-20 Cel |
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|
Onsemi |
THROUGH HOLE MOUNT |
Photo Diodes |
30 V |
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|
|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
5.26 mm |
30 nA |
1 |
YES |
920 |
.00000005 s |
Photo Diodes |
32 V |
85 Cel |
32 V |
RECTANGULAR |
-40 Cel |
DAYLIGHT FILTER |
.03 mA |
e3 |
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|
Onsemi |
THROUGH HOLE MOUNT |
30 nA |
.00000002 s |
Photo Diodes |
30 V |
70 Cel |
-20 Cel |
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|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
Photo Diodes |
30 V |
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|
|
Onsemi |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
7.6 mm |
30 nA |
1 |
YES |
940 |
.00000005 s |
Photo Diodes |
32 V |
85 Cel |
32 V |
RECTANGULAR |
-40 Cel |
DAYLIGHT FILTER |
.03 mA |
e3 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
COMMON CATHODE, 8 ELEMENTS |
.005 nA |
8 |
YES |
850 |
Photo Diodes |
80 Cel |
10 V |
RECTANGULAR |
-40 Cel |
HIGH RELIABILITY, LOW NOISE |
.016 mA |
e0 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SEPARATE, 6 ELEMENTS |
2.5 mm |
1 nA |
6 |
YES |
870 |
Photo Diodes |
80 Cel |
20 V |
SQUARE |
-40 Cel |
.008 mA |
e0 |
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|
Infineon Technologies |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
20 nA |
.0000000000003 s |
Photo Diodes |
Germanium |
85 Cel |
-40 Cel |
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|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.54 mm |
10 nA |
1 |
YES |
1250 |
.0000000000003 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
ROUND |
-40 Cel |
e0 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
200 nA |
.0000013 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
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|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
.0000000000003 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
.0000005 s |
Photo Diodes |
85 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
1 nA |
.0000000000003 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
-40 Cel |
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|
Infineon Technologies |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
.0000000000003 s |
Photo Diodes |
Germanium |
85 Cel |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
200 nA |
.0000013 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
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|
Infineon Technologies |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
300 nA |
1 |
.0000000000003 s |
Photo Diodes |
Germanium |
85 Cel |
28 V |
ROUND |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
200 nA |
.0000013 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
30 nA |
.000000014 s |
Photo Diodes |
80 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
Photo Diodes |
80 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
100 nA |
1 |
.000002 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
ROUND |
-50 Cel |
.1 mA |
e0 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
SINGLE |
2.73 mm |
7 nA |
1 |
YES |
850 |
.0000016 s |
Photo Diodes |
10 V |
Silicon |
80 Cel |
32 V |
RECTANGULAR |
-40 Cel |
.0074 mA |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
Photo Diodes |
80 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
10 nA |
.000002 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
-50 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
10 nA |
.0000018 s |
Photo Diodes |
7 V |
Silicon |
80 Cel |
-40 Cel |
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|
Infineon Technologies |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
20 nA |
.0000000000003 s |
Photo Diodes |
Germanium |
85 Cel |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
Photo Diodes |
80 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
COMMON CATHODE, 4 ELEMENTS |
2.65 mm |
2 nA |
.8 V |
4 |
YES |
880 |
Optical Position Encoders |
80 Cel |
32 V |
SQUARE |
-40 Cel |
HIGH RELIABILITY, LOW NOISE |
.075 mA |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SEPARATE, 6 ELEMENTS |
2.5 mm |
1 nA |
6 |
YES |
870 |
Photo Diodes |
80 Cel |
20 V |
SQUARE |
-40 Cel |
.0085 mA |
e0 |
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|
Infineon Technologies |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
20 nA |
.0000000000003 s |
Photo Diodes |
Germanium |
85 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
AVALANCHE PHOTODIODE |
THROUGH HOLE MOUNT |
200 nA |
.0000000000003 s |
Photo Diodes |
Germanium |
85 Cel |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
COMMON CATHODE, 4 ELEMENTS |
4.47 mm |
10 nA |
.8 V |
4 |
YES |
920 |
Optical Position Encoders |
80 Cel |
20 V |
SQUARE |
-40 Cel |
HIGH RELIABILITY, LOW NOISE |
.17 mA |
|||||||||
|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
4.675 mm |
50 nA |
1 |
.00000000000025 s |
Photo Diodes |
20 V |
InGaAs |
85 Cel |
20 V |
ROUND |
-40 Cel |
e0 |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.