AVALANCHE PHOTODIODE Photodiodes 181

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Reverse Voltage	Semiconductor Material	Maximum Operating Temperature	Minimum Reverse Breakdown Voltage	Shape	Minimum Operating Temperature	Additional Features
NDL5105P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA				.0000000008 s	Photo Diodes	45 V	Germanium	60 Cel			-30 Cel
NDL5151P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			300 nA					Photo Diodes	40 V	Germanium	85 Cel			-40 Cel
NDL5500P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			100 nA				.000000004 s	Photo Diodes	120 V	InGaAs	60 Cel			-40 Cel
NR6300EZ	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			25 nA					Photo Diodes		InGaAs	85 Cel			-40 Cel
NR8800CS-BB-AZ	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			30 nA					Photo Diodes		InGaAs	85 Cel			-40 Cel
NDL5102	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA				.0000000008 s	Photo Diodes	45 V	Germanium	60 Cel			-40 Cel
NDL5131P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NDL5171P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			500 nA					Photo Diodes	48 V	Germanium	85 Cel			-40 Cel
NDL5131PC	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NDL5131P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NDL5131PD	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NR8800FS-BB-AZ	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			30 nA					Photo Diodes		InGaAs	85 Cel			-40 Cel
NDL5131P1D	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NDL5171P2C	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			500 nA					Photo Diodes	48 V	Germanium	85 Cel			-40 Cel
NDL5500C	Renesas Electronics	AVALANCHE PHOTODIODE	SURFACE MOUNT			100 nA					Photo Diodes	120 V	InGaAs	70 Cel			-40 Cel
NDL5151P2C	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			300 nA					Photo Diodes	40 V	Germanium	85 Cel			-40 Cel
NDL5501P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			50 nA					Photo Diodes	100 V	InGaAs	60 Cel			-30 Cel
NDL5100C	Renesas Electronics	AVALANCHE PHOTODIODE	SURFACE MOUNT			500 nA				.0000000008 s	Photo Diodes	48 V	Germanium	60 Cel			-40 Cel
NDL5171P1C	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			500 nA					Photo Diodes	48 V	Germanium	85 Cel			-40 Cel
NDL5171P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			500 nA					Photo Diodes	48 V	Germanium	85 Cel			-40 Cel
NDL5151PC	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			300 nA					Photo Diodes	40 V	Germanium	85 Cel			-40 Cel
NDL5131P2D	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NDL5131P2	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
NDL5104P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			500 nA				.0000000008 s	Photo Diodes	48 V	Germanium	60 Cel			-30 Cel
NDL5520P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			50 nA					Photo Diodes	80 V	GaInAs	60 Cel			-30 Cel
NDL5501P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			50 nA					Photo Diodes	100 V	InGaAs	60 Cel			-30 Cel
HR8203KG	Renesas Electronics	AVALANCHE PHOTODIODE		SINGLE	3 mm	50 nA	1	NO	600					80 Cel	60 V	ROUND	-40 Cel	RESPONDS TO 600 TO 900 NANO METRE
OD-8421	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			50 nA					Photo Diodes		InGaAs	85 Cel			-40 Cel
NDL5520P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			50 nA					Photo Diodes	80 V	GaInAs	60 Cel			-30 Cel
NDL5103P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			300 nA				.0000000008 s	Photo Diodes	40 V	Germanium	60 Cel			-30 Cel
NDL5103P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			300 nA				.0000000008 s	Photo Diodes	40 V	Germanium	60 Cel			-30 Cel
NDL5105P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA				.0000000008 s	Photo Diodes	45 V	Germanium	60 Cel			-30 Cel
NR8800FS-CB	Renesas Electronics	AVALANCHE PHOTODIODE				30 nA					Photo Diodes	100 V	InGaAs	85 Cel			-40 Cel
NDL5104P1	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			500 nA				.0000000008 s	Photo Diodes	48 V	Germanium	60 Cel			-30 Cel
NDL5151P	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			300 nA					Photo Diodes	40 V	Germanium	85 Cel			-40 Cel
NDL5131P1C	Renesas Electronics	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT			200 nA					Photo Diodes	45 V	Germanium	85 Cel			-40 Cel
AFBR-S4N44P044M	Broadcom	AVALANCHE PHOTODIODE

Photodiodes

A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.

Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.

Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.

PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.

Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.

Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.