AVALANCHE PHOTODIODE Photodiodes 181

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Packing Method	Semiconductor Material	Maximum Operating Temperature	Minimum Reverse Breakdown Voltage	Shape	Minimum Operating Temperature	Additional Features
MICROFC-30020-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	142 nA			420	TR	Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFR-10035-MLP-TA	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	81 nA	1	NO	635	TAPE		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFC-10035-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	1 mm	49 nA			420	TR	Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFC-30050-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	914 nA			420	TR	Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-60035-TSV	Onsemi	AVALANCHE PHOTODIODE
MICROFJ-SMA-30035-GEVB-PK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	3.07 mm	3000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFJ-SMA-30020-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFR-10010-MLP-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	6 nA	1	NO	635	TR		85 Cel	24.25 V	SQUARE	-40 Cel
MICRORB-SMTPA-10010-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFJ-30035-TSV	Onsemi	AVALANCHE PHOTODIODE
MICROFR-10050-MLP-GP	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	146 nA	1	NO	635	GEL PACK		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFJ-SMA-40035-GEVB-PK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	3.93 mm	4000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-30020-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	142 nA			420		Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-SMTPA-60035-GEVB-PK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	6.07 mm	12000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICRORB-SMA-10035-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICRORB-SMTPA-10035-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFC-10010-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	1 mm	3 nA			420		Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFC-30020-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	142 nA			420	TR	Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-60035-TSV-TR	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	6.07 mm	12000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFJ-40035-TSV-TR	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	3.93 mm	4000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICRORB-SMTPA-10020-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFC-10010-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	1 mm	3 nA			420	TR	Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFR-10035-MLP-GP	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	81 nA	1	NO	635	GEL PACK		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFJ-SMA-40035-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFR-10050-MLP-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	146 nA	1	NO	635	TR		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFJ-SMA-30020-GEVB-PK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	3.07 mm	720 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-30050-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	914 nA			420		Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFC-30035-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	443 nA			420		Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-SMTPA-30035-GEVBPK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	3.07 mm	3000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-60035-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	6 mm	1750 nA			420		Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-40035-TSV	Onsemi	AVALANCHE PHOTODIODE
MICROFJ-SMTPA-30020-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFC-10035-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	1 mm	49 nA			420	TR	Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFR-10010-MLP-TA	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	6 nA	1	NO	635	TAPE		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFC-10035-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	1 mm	49 nA			420		Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFJ-SMTPA-30020-GEVB-PK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	3.07 mm	720 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-30050-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	3 mm	914 nA			420	TR	Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFR-10020-MLP-GP	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	25 nA	1	NO	635	GEL PACK		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFR-10050-MLP-TA	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	146 nA	1	NO	635	TAPE		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFJ-30020-TSV	Onsemi	AVALANCHE PHOTODIODE
MICROFR-10020-MLP-TA	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	25 nA	1	NO	635	TAPE		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFR-10020-MLP-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	25 nA	1	NO	635	TR		85 Cel	24.25 V	SQUARE	-40 Cel
MICROFJ-SMA-60035-GEVB-PK	Onsemi	AVALANCHE PHOTODIODE		COMPLEX	6.07 mm	12000 nA	1	NO	420			85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-10020-SMT	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	COMPLEX	1 mm	16 nA			420		Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFR-10010-MLP-GP	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT	SINGLE	1 mm	6 nA	1	NO	635	GEL PACK		85 Cel	24.25 V	SQUARE	-40 Cel
MICRORB-SMA-10010-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFC-SMA-60035-GEVB-TR1	Onsemi	AVALANCHE PHOTODIODE
MICROFC-SMTPA-30020-GEVB-TR	Onsemi	AVALANCHE PHOTODIODE

Photodiodes

A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.

Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.

Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.

PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.

Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.

Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.