Onsemi - MICROFJ-SMTPA-30035-GEVBPK

  1. Home
  2. Onsemi - MICROFJ-SMTPA-30035-GEVBPK
MICROFJ-SMTPA-30035-GEVBPK by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MICROFJ-SMTPA-30035-GEVBPK
Description AVALANCHE PHOTODIODE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Maximum Dark Current: 3000 nA; Shape: SQUARE; Minimum Operating Temperature: -40 Cel;
Datasheet MICROFJ-SMTPA-30035-GEVBPK Datasheet
In Stock527
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: NO
Maximum Dark Current: 3000 nA
Optoelectronic Type: AVALANCHE PHOTODIODE
Shape: SQUARE
Configuration: COMPLEX
Size: 3.07 mm
Peak Wavelength (nm): 420
Maximum Operating Temperature: 85 Cel
Minimum Reverse Breakdown Voltage: 24.2 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
527 - -

Popular Products

Category Top Products

KOM2125 by Infineon Technologies

KOM2125

Infineon Technologies

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000025 s;
NDL5151P1 by Renesas Electronics

NDL5151P1

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 40 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 300 nA;
MICROFJ-30035-TSV-TR1 by Onsemi

MICROFJ-30035-TSV-TR1

Onsemi

MICROFJ-30035-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 3000nA. Ideal for applications requiring high sensitivity in optoelectronic systems.
SFH2224 by Infineon Technologies

SFH2224

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 10 nA; Maximum Response Time: .0000000005 s; Maximum Reverse Voltage: 20 V;
OD-8453NA by Renesas Electronics

OD-8453NA

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel;
PH312 by Renesas Electronics

PH312

Renesas Electronics

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000001 s; JESD-609 Code: e0;
BPW34FS(E9087) by Infineon Technologies

BPW34FS(E9087)

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 30 nA; JESD-609 Code: e0;
BPX48F by Infineon Technologies

BPX48F

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;
MICROFJ-SMTPA-30020-GEVB-PK by Onsemi

MICROFJ-SMTPA-30020-GEVB-PK

Onsemi

MICROFJ-SMTPA-30020-GEVB-PK by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 720nA. Ideal for applications requiring high sensitivity in optoelectronic systems.
BPW34BS by Infineon Technologies

BPW34BS

Infineon Technologies

BPW34BS by Infineon Technologies is a single PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 85°C, with reverse breakdown voltage of 32V. Ideal for infrared applications, it has a square shape and surface mount feature.
MICROFC-10035-SMT by Onsemi

MICROFC-10035-SMT

Onsemi

MICROFC-10035-SMT by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for optoelectronic applications requiring high sensitivity in a compact surface mount configuration.
NDL5131P2 by Renesas Electronics

NDL5131P2

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Semiconductor Material: Germanium; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
SFH205FA by Siemens

SFH205FA

Siemens

PIN PHOTODIODE; Additional Features: SIDE VIEW; Configuration: SINGLE; Peak Wavelength (nm): 870; Nominal Light Current: .045 mA; Maximum Dark Current: 30 nA;
HSDL-5400 by Broadcom

HSDL-5400

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Size: 1.78 mm; Infrared (IR) Range: YES; JESD-609 Code: e3; Configuration: SINGLE;
124NTCOQ52 by Broadcom

124NTCOQ52

Broadcom

Photo Diodes;
BPW21 by Infineon Technologies

BPW21

Infineon Technologies

Infineon Technologies' BPW21 photodiode has a max operating temp of 80°C and min of -40°C. With a max dark current of 2nA, response time of 0.0000015s, and reverse voltage of 10V, it's ideal for light detection in various applications.
SFH248F by Infineon Technologies

SFH248F

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000005 s; Maximum Reverse Voltage: 10 V; Maximum Operating Temperature: 80 Cel;
MICROFR-10010-MLP-TR by Onsemi

MICROFR-10010-MLP-TR

Onsemi

MICROFR-10010-MLP-TR by Onsemi is a single avalanche photodiode with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.25V, and max dark current of 6nA. Ideal for surface mount applications in optoelectronics.
BPW34FS-Z by Osram Opto Semiconductors

BPW34FS-Z

Osram Opto Semiconductors

Photo Diodes;
NDL5171PC by Renesas Electronics

NDL5171PC

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium; Maximum Reverse Voltage: 48 V; Maximum Dark Current: 500 nA;