AVALANCHE PHOTODIODE Photodiodes 181

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Packing Method	Sub-Category	Maximum Reverse Voltage	Semiconductor Material	Maximum Operating Temperature	Minimum Reverse Breakdown Voltage	Shape	Minimum Operating Temperature	Additional Features	Nominal Light Current	JESD-609 Code
MICROFC-60035-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	6 mm	1750 nA			420	TR			Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-60035-TSV-TR1	Onsemi	AVALANCHE PHOTODIODE			COMPLEX	6.07 mm	12000 nA	1	NO	420					85 Cel	24.2 V	SQUARE	-40 Cel
MICROFJ-30035-TSV-TR1	Onsemi	AVALANCHE PHOTODIODE			COMPLEX	3.07 mm	3000 nA	1	NO	420					85 Cel	24.2 V	SQUARE	-40 Cel
SFH2440	Osram Opto Semiconductors	AVALANCHE PHOTODIODE
SFH2430-Z	Osram Opto Semiconductors	AVALANCHE PHOTODIODE		TIN																	e3
MICROFC-60035-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	6 mm	1750 nA			420	TR			Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-SMTPA-30035-GEVB	Onsemi	AVALANCHE PHOTODIODE
ARRAYC-60035-4P-BGA	Onsemi	AVALANCHE PHOTODIODE
MICROFJ-30035-TSV-TR	Onsemi	AVALANCHE PHOTODIODE			COMPLEX	3.07 mm	3000 nA	1	NO	420					85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-10010-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	1 mm	3 nA			420	TR			Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFC-SMA-60035-GEVB	Onsemi	AVALANCHE PHOTODIODE
SFH5701A01	Osram Opto Semiconductors	AVALANCHE PHOTODIODE		GOLD																	e4
MICROFJ-SMA-60035-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFC-30035-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	3 mm	443 nA			420	TR			Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-30020-TSV-TR1	Onsemi	AVALANCHE PHOTODIODE			COMPLEX	3.07 mm	720 nA	1	NO	420					85 Cel	24.2 V	SQUARE	-40 Cel
MICROFC-10020-SMT-TR1	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	1 mm	16 nA			420	TR			Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFC-30035-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	3 mm	443 nA			420	TR			Silicon	85 Cel	24.2 V	SQUARE	-40 Cel	LOW NOISE
MICROFJ-30020-TSV-TR	Onsemi	AVALANCHE PHOTODIODE			COMPLEX	3.07 mm	720 nA	1	NO	420					85 Cel	24.2 V	SQUARE	-40 Cel
S2386-5K	Hamamatsu Photonics Kk	AVALANCHE PHOTODIODE	RADIAL MOUNT		SINGLE	2.4 mm	.005 nA	1	YES	960		Photo Diodes	30 V	Silicon	100 Cel		SQUARE	-40 Cel	HIGH RELIABILITY	.006 mA
SFH5701	Osram Opto Semiconductors	AVALANCHE PHOTODIODE
SLSD-71N300	Laser Components	AVALANCHE PHOTODIODE
MICROFJ-SMA-30035-GEVB	Onsemi	AVALANCHE PHOTODIODE
ARRAYC-30035-16P-PCB	Onsemi	AVALANCHE PHOTODIODE
MICRORB-SMA-10020-GEVB	Onsemi	AVALANCHE PHOTODIODE
3001380-F	TE Connectivity	AVALANCHE PHOTODIODE	PANEL MOUNT												100 Cel			-40 Cel
MICROFJ-40035-TSV-TR1	Onsemi	AVALANCHE PHOTODIODE			COMPLEX	3.93 mm	4000 nA	1	NO	420					85 Cel	24.2 V	SQUARE	-40 Cel
S2386-44K	Hamamatsu Photonics Kk	AVALANCHE PHOTODIODE	RADIAL MOUNT		SINGLE	3.6 mm	.02 nA	1	YES	960		Photo Diodes	30 V	Silicon	100 Cel		SQUARE	-40 Cel	HIGH RELIABILITY	.012 mA
MICROFC-10020-SMT-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		COMPLEX	1 mm	16 nA			420	TR			Silicon	85 Cel	24.2 V	RECTANGULAR	-40 Cel	LOW NOISE
MICROFC-SMA-30050-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFJ-SMTPA-60035-GEVB	Onsemi	AVALANCHE PHOTODIODE
S2386-8K	Hamamatsu Photonics Kk	AVALANCHE PHOTODIODE	RADIAL MOUNT		SINGLE	5.8 mm	.05 nA	1	YES	960		Photo Diodes	30 V	Silicon	100 Cel		SQUARE	-40 Cel	HIGH RELIABILITY	.033 mA
ARRAYC-60035-64P-PCB	Onsemi	AVALANCHE PHOTODIODE
ARRAYRDM-0116A10-DFN-TR	Onsemi	AVALANCHE PHOTODIODE
MICROFC-SMA-30035-GEVB	Onsemi	AVALANCHE PHOTODIODE
MICROFC-SMTPA-30035-GEVB	Onsemi	AVALANCHE PHOTODIODE
ARRAYRDM-0116A10-DFN-TR1	Onsemi	AVALANCHE PHOTODIODE
OPR5911	Tt Electronics Plc	AVALANCHE PHOTODIODE										Photo Diodes
AFBR-S4N33C013	Broadcom	AVALANCHE PHOTODIODE
AFBR-S4N44P163	Broadcom	AVALANCHE PHOTODIODE
TIED55	Texas Instruments	AVALANCHE PHOTODIODE					.03 nA					Photo Diodes	185 V	Silicon	125 Cel			-60 Cel
TIED451	Texas Instruments	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT				.15 nA					Photo Diodes	185 V	Silicon	60 Cel			-40 Cel
TIED83	Texas Instruments	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT				.03 nA					Photo Diodes	120 V	Silicon	125 Cel			-60 Cel
TIED86	Texas Instruments	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT				.15 nA					Photo Diodes	120 V	Silicon	125 Cel			-60 Cel
TIED85	Texas Instruments	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT				.03 nA					Photo Diodes	120 V	Silicon	125 Cel			-60 Cel
TIED84	Texas Instruments	AVALANCHE PHOTODIODE	THROUGH HOLE MOUNT				.15 nA					Photo Diodes	120 V	Silicon	125 Cel			-60 Cel
ARRAYRDM-0112A20-QFN-TR-E	Onsemi	AVALANCHE PHOTODIODE
ARRAYC-30035-144P-PCB	Onsemi	AVALANCHE PHOTODIODE
MICROFR-10035-MLP-TR	Onsemi	AVALANCHE PHOTODIODE	SURFACE MOUNT		SINGLE	1 mm	81 nA	1	NO	635	TR				85 Cel	24.25 V	SQUARE	-40 Cel

Photodiodes

A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.

Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.

Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.

PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.

Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.

Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.