Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
30 nA |
.00000002 s |
Photo Diodes |
20 V |
Silicon |
80 Cel |
-40 Cel |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2.2 mm |
30 nA |
1 |
YES |
850 |
.00000002 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
20 V |
SQUARE |
-40 Cel |
.04 mA |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.5 mm |
30 nA |
1 |
YES |
950 |
.0000001 s |
Photo Diodes |
Silicon |
100 Cel |
60 V |
ROUND |
-55 Cel |
SIDE VIEW |
.06 mA |
e3 |
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|
Hamamatsu Photonics Kk |
PIN PHOTODIODE |
SINGLE |
.3 mm |
4000 nA |
1 |
YES |
2300 |
85 Cel |
ROUND |
-40 Cel |
HIGH RELIABILITY, HIGH SENSITIVITY, LOW NOISE |
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|
Broadcom |
PIN PHOTODIODE |
Tin (Sn) |
SINGLE |
1.78 mm |
5 nA |
1 |
YES |
875 |
85 Cel |
40 V |
ROUND |
-40 Cel |
.0016 mA |
e3 |
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|
Broadcom |
PIN PHOTODIODE |
Tin (Sn) |
SINGLE |
1.78 mm |
5 nA |
1 |
YES |
875 |
85 Cel |
40 V |
ROUND |
-40 Cel |
.0016 mA |
e3 |
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|
Onsemi |
AVALANCHE PHOTODIODE |
SURFACE MOUNT |
COMPLEX |
1 mm |
16 nA |
420 |
TR |
Silicon |
85 Cel |
24.2 V |
RECTANGULAR |
-40 Cel |
LOW NOISE |
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|
Onsemi |
AVALANCHE PHOTODIODE |
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Onsemi |
AVALANCHE PHOTODIODE |
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|
Tt Electronics Plc |
PIN PHOTODIODE |
RADIAL MOUNT |
SINGLE |
1.58 mm |
60 nA |
1 |
YES |
935 |
GaAlAs |
100 Cel |
60 V |
ROUND |
-40 Cel |
SIDE VIEW, RESPONDS FROM VISIBLE TO INFRARED RANGE |
.008 mA |
||||||||
First Sensor Ag |
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|
Everlight Electronics |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
1.9 mm |
10 nA |
1 |
YES |
940 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
ROUND |
-25 Cel |
.004 mA |
|||||||
Laser Components |
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Luna Innovations |
125 Cel |
-40 Cel |
||||||||||||||||||||||
Luna Innovations |
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|
Hamamatsu Photonics Kk |
AVALANCHE PHOTODIODE |
RADIAL MOUNT |
SINGLE |
5.8 mm |
.05 nA |
1 |
YES |
960 |
Photo Diodes |
30 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
HIGH RELIABILITY |
.033 mA |
|||||||
Luna Innovations |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
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|
Osram Opto Semiconductors |
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|
Osram Opto Semiconductors |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
840 |
TR |
20 V |
Silicon |
85 Cel |
SQUARE |
-40 Cel |
.02 mA |
|||||||||
Onsemi |
AVALANCHE PHOTODIODE |
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Onsemi |
AVALANCHE PHOTODIODE |
|||||||||||||||||||||||
Infineon Technologies |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) - with Nickel (Ni) barrier |
SINGLE |
2.73 mm |
30 nA |
1 |
YES |
850 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
SQUARE |
-40 Cel |
.0054 mA |
e3 |
||||||
Centronic |
||||||||||||||||||||||||
|
Onsemi |
AVALANCHE PHOTODIODE |
||||||||||||||||||||||
|
Onsemi |
AVALANCHE PHOTODIODE |
||||||||||||||||||||||
Luna Innovations |
||||||||||||||||||||||||
United Detector Technology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
20 nA |
.00000002 s |
Photo Diodes |
50 V |
Silicon |
125 Cel |
-55 Cel |
|||||||||||||||
First Sensor Ag |
||||||||||||||||||||||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
.0000005 s |
Photo Diodes |
10 V |
Silicon |
80 Cel |
-40 Cel |
e0 |
||||||||||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
.59 mm |
5 nA |
1 |
NO |
620 |
TR, 7 INCH |
16 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
.00057 mA |
||||||||
Luna Innovations |
PN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
1700 nA |
1 |
YES |
930 |
Silicon |
125 Cel |
20 V |
RECTANGULAR |
-40 Cel |
HIGH RELIABILITY |
.17 mA |
||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
900 |
TR, 13 INCH |
Photo Diodes |
60 V |
Silicon |
100 Cel |
32 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.012 mA |
||||||
Onsemi |
AVALANCHE PHOTODIODE |
|||||||||||||||||||||||
|
Tt Electronics Plc |
AVALANCHE PHOTODIODE |
Photo Diodes |
|||||||||||||||||||||
|
Everlight Electronics |
PIN PHOTODIODE |
SINGLE |
30 nA |
1 |
YES |
940 |
85 Cel |
32 V |
RECTANGULAR |
-25 Cel |
DAYLIGHT FILTER |
.035 mA |
|||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
1 nA |
.000000005 s |
Photo Diodes |
50 V |
Silicon |
100 Cel |
-55 Cel |
e0 |
||||||||||||||
|
ROHM |
PIN PHOTODIODE |
||||||||||||||||||||||
|
Broadcom |
AVALANCHE PHOTODIODE |
||||||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
900 |
TR, 13 INCH |
60 V |
Silicon |
100 Cel |
32 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.01 mA |
|||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
3 mm |
3 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.027 mA |
e3 |
||||
|
Broadcom |
AVALANCHE PHOTODIODE |
||||||||||||||||||||||
Motorola |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
4.735 mm |
2 nA |
1 |
.000000001 s |
Photo Diodes |
100 V |
Silicon |
125 Cel |
100 V |
ROUND |
-55 Cel |
RESPONDS FROM VISIBLE TO INFRARED RANGE |
.0021 mA |
e0 |
||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4 mm |
10 nA |
1 |
YES |
900 |
.000000007 s |
Photo Diodes |
Silicon |
125 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.06 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
6.4 mm |
30 nA |
1 |
YES |
950 |
.00000005 s |
Photo Diodes |
32 V |
GaAs |
80 Cel |
60 V |
RECTANGULAR |
-30 Cel |
HIGH SENSITIVITY |
.038 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2 mm |
3 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.003 mA |
||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.035 mA |
e3 |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.