Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Nominal Supply Voltage | Packing Method | Maximum Response Time | Sub-Category | Maximum Operating Temperature | Shape | Minimum Operating Temperature | Minimum Collector-emitter Breakdown Voltage | Maximum Power Dissipation | Additional Features | Nominal Light Current | JESD-609 Code | Maximum On State Current |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
SURFACE MOUNT |
25 nA |
900 |
.000008 s |
Photo Transistors |
125 Cel |
-60 Cel |
.05 W |
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Texas Instruments |
SURFACE MOUNT |
25 nA |
900 |
.000008 s |
Photo Transistors |
125 Cel |
-60 Cel |
.05 W |
||||||||||||||||
Texas Instruments |
SURFACE MOUNT |
25 nA |
900 |
.000008 s |
Photo Transistors |
125 Cel |
-60 Cel |
.05 W |
||||||||||||||||
Texas Instruments |
SURFACE MOUNT |
25 nA |
900 |
.000008 s |
Photo Transistors |
125 Cel |
-60 Cel |
.05 W |
||||||||||||||||
Onsemi |
PHOTO TRANSISTOR |
SURFACE MOUNT |
SINGLE |
2 mm |
100 nA |
1 |
YES |
940 |
85 Cel |
ROUND |
-25 Cel |
30 V |
.075 W |
1.5 mA |
||||||||||
|
Onsemi |
PHOTO TRANSISTOR |
SURFACE MOUNT |
MATTE TIN |
SINGLE |
1.9 mm |
100 nA |
1 |
YES |
940 |
Photo Transistors |
85 Cel |
ROUND |
-25 Cel |
30 V |
.075 W |
DAY LIGHT FILTER |
1.5 mA |
e3 |
|||||
Onsemi |
PHOTO TRANSISTOR |
SURFACE MOUNT |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
880 |
100 Cel |
ROUND |
-55 Cel |
30 V |
.165 W |
HIGH SENSITIVITY |
.016 mA |
.015 A |
||||||||
|
Onsemi |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin (Sn) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
880 |
TR |
Photo Transistors |
100 Cel |
ROUND |
-55 Cel |
30 V |
.165 W |
HIGH SENSITIVITY |
.016 mA |
e3 |
.015 A |
|||
|
Onsemi |
PHOTO TRANSISTOR |
SURFACE MOUNT |
MATTE TIN |
SINGLE |
1.9 mm |
100 nA |
1 |
YES |
940 |
Photo Transistors |
85 Cel |
ROUND |
-25 Cel |
30 V |
.075 W |
DAY LIGHT FILTER |
1.5 mA |
e3 |
|||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.016 mA |
e0 |
.015 A |
|||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.016 mA |
e0 |
.015 A |
||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.016 mA |
e0 |
.015 A |
||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
50 nA |
950 |
Photo Transistors |
100 Cel |
-40 Cel |
.165 W |
e0 |
.015 A |
||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
860 |
.000008 s |
Photo Transistors |
100 Cel |
-40 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000006 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.65 mA |
e0 |
.015 A |
|||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
3 nA |
570 |
Photo Transistors |
100 Cel |
-40 Cel |
e0 |
.02 A |
|||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
1080 |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
.05 A |
|||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000005 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.016 mA |
e0 |
.015 A |
||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
1 mA |
e0 |
.015 A |
|||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
1 mA |
e0 |
.015 A |
|||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
850 |
Photo Transistors |
85 Cel |
-40 Cel |
.12 W |
e0 |
.05 A |
||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
1080 |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
.05 A |
|||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
850 |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
.05 A |
|||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000008 s |
Photo Transistors |
100 Cel |
-40 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
Infineon Technologies |
SURFACE MOUNT |
200 nA |
860 |
.000006 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
.015 A |
|||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
3 nA |
570 |
Photo Transistors |
100 Cel |
-40 Cel |
e0 |
.02 A |
|||||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
.000007 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.65 mA |
e0 |
.015 A |
|||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
.000007 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.65 mA |
.015 A |
|||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
3 nA |
570 |
Photo Transistors |
100 Cel |
-40 Cel |
e0 |
.02 A |
|||||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.016 mA |
e0 |
.015 A |
|||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
850 |
Photo Transistors |
85 Cel |
-40 Cel |
.12 W |
e0 |
.05 A |
||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
1080 |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
.05 A |
|||||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
860 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
1 mA |
e0 |
.015 A |
|||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
850 |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
.05 A |
|||||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.65 mA |
e0 |
.015 A |
|||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
50 nA |
950 |
Photo Transistors |
100 Cel |
-40 Cel |
.13 W |
e0 |
.015 A |
||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
3 nA |
570 |
Photo Transistors |
85 Cel |
-40 Cel |
.02 A |
|||||||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
1 mA |
e0 |
.015 A |
|||||||
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
3 nA |
570 |
Photo Transistors |
100 Cel |
-40 Cel |
e0 |
.02 A |
|||||||||||||||
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.016 mA |
e0 |
.015 A |
||||||
Toshiba |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
1.65 mm |
100 nA |
1 |
NO |
720 |
.0002 s |
Photo Transistors |
85 Cel |
ROUND |
-25 Cel |
20 V |
.05 W |
DOUBLE END |
.04 mA |
e0 |
.02 A |
||||
Toshiba |
PHOTO DARLINGTON |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
1.6 mm |
250 nA |
1 |
NO |
720 |
Photo Transistors |
70 Cel |
ROUND |
0 Cel |
30 V |
.075 W |
DOUBLE END; HIGH SENSITIVITY |
1 mA |
e0 |
.04 A |
|||||
Renesas Electronics |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
3.8 mm |
200 nA |
1 |
.000005 s |
Photo Transistors |
85 Cel |
ROUND |
-30 Cel |
30 V |
.1 W |
HIGH SENSITIVITY |
.18 mA |
e0 |
.04 A |
||||||
Renesas Electronics |
PHOTO DARLINGTON |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
3.8 mm |
500 nA |
1 |
850 |
Photo Transistors |
85 Cel |
ROUND |
20 V |
.1 W |
HIGH SENSITIVITY |
12 mA |
e0 |
.05 A |
A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.
Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.