Infineon Technologies Phototransistors 169
| Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Nominal Supply Voltage | Packing Method | Maximum Response Time | Sub-Category | Maximum Operating Temperature | Shape | Minimum Operating Temperature | Minimum Collector-emitter Breakdown Voltage | Maximum Power Dissipation | Additional Features | Nominal Light Current | JESD-609 Code | Maximum On State Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
50 nA |
950 |
Photo Transistors |
100 Cel |
-40 Cel |
.13 W |
e0 |
.015 A |
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|
Infineon Technologies |
SURFACE MOUNT |
3 nA |
570 |
Photo Transistors |
85 Cel |
-40 Cel |
.02 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
870 |
.000012 s |
Photo Transistors |
100 Cel |
-55 Cel |
e0 |
.05 A |
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|
Infineon Technologies |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
5 mm |
50 nA |
1 |
YES |
850 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
e0 |
.05 A |
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|
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
1 mA |
e0 |
.015 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
850 |
.000012 s |
Photo Transistors |
100 Cel |
-55 Cel |
.2 W |
e0 |
.05 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
880 |
Photo Transistors |
100 Cel |
-55 Cel |
e0 |
.05 A |
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|
Infineon Technologies |
PHOTO DARLINGTON |
THROUGH HOLE MOUNT |
200 nA |
.000008 s |
Photo Transistors |
80 Cel |
-40 Cel |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
.000008 s |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
20 nA |
850 |
.0000055 s |
Photo Transistors |
85 Cel |
-40 Cel |
.075 W |
.05 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
860 |
.000007 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
850 |
Photo Transistors |
100 Cel |
-55 Cel |
e0 |
.05 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
850 |
.000009 s |
Photo Transistors |
125 Cel |
-55 Cel |
.3 W |
e0 |
.05 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
860 |
.000005 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
10 nA |
870 |
.000012 s |
Photo Transistors |
100 Cel |
-55 Cel |
.2 W |
e0 |
.05 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
50 nA |
900 |
.000015 s |
Photo Transistors |
100 Cel |
-55 Cel |
.2 W |
e0 |
.05 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
50 nA |
850 |
.000011 s |
Photo Transistors |
100 Cel |
-55 Cel |
.2 W |
e0 |
.05 A |
|||||||||||||
|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000005 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
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|
Infineon Technologies |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
3 nA |
570 |
Photo Transistors |
100 Cel |
-40 Cel |
e0 |
.02 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
2 nA |
850 |
.000015 s |
Photo Transistors |
100 Cel |
-55 Cel |
.2 W |
e0 |
.05 A |
|||||||||||||
|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
.000008 s |
Photo Transistors |
95 Cel |
-40 Cel |
e0 |
||||||||||||||||
|
Infineon Technologies |
PHOTO TRANSISTOR |
SURFACE MOUNT |
Tin/Lead (Sn/Pb) |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
.016 mA |
e0 |
.015 A |
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|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000006 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
|
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
850 |
Photo Transistors |
125 Cel |
-55 Cel |
.2 W |
e0 |
.1 A |
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|
Infineon Technologies |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
2.4 mm |
200 nA |
1 |
YES |
900 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
35 V |
.165 W |
1 mA |
.015 A |
A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.
Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.