Infineon Technologies Phototransistors 169

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Operating Temperature	Shape	Minimum Operating Temperature	Minimum Collector-emitter Breakdown Voltage	Maximum Power Dissipation	Nominal Light Current	JESD-609 Code	Maximum On State Current
SFH309FA-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000007 s	Photo Transistors	100 Cel		-55 Cel		.165 W		e0	.015 A
SFH309FA	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900		Photo Transistors	100 Cel		-55 Cel				e0	.015 A
LPT80A	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						870		Photo Transistors	100 Cel		-40 Cel		.1 W		e0	.05 A
SFH300FA	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			870		Photo Transistors	100 Cel		-40 Cel				e0	.05 A
SFH313FA	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			870		Photo Transistors	100 Cel		-55 Cel				e0	.05 A
SFH309FA-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000009 s	Photo Transistors	100 Cel		-55 Cel		.165 W		e0	.015 A
SFH3201	Infineon Technologies		SURFACE MOUNT				200 nA			860	.000005 s	Photo Transistors	100 Cel		-55 Cel		.165 W			.015 A
BPX86	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	85 Cel		-40 Cel				e0
SFH3400	Infineon Technologies		SURFACE MOUNT	Tin/Lead (Sn/Pb)			200 nA			850	.014 s	Photo Transistors	85 Cel		-40 Cel		.12 W		e0	.05 A
BPY62-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000009 s	Photo Transistors	125 Cel		-55 Cel		.3 W		e0	.05 A
BPX84	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	85 Cel		-40 Cel				e0
BPX89	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	85 Cel		-40 Cel				e0
SFH309	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			860		Photo Transistors	100 Cel		-55 Cel				e0	.015 A
SFH309-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			860	.000008 s	Photo Transistors	100 Cel		-55 Cel		.165 W		e0	.015 A
SFH313FA-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			870		Photo Transistors	100 Cel		-55 Cel				e0	.05 A
BPX81	Infineon Technologies		THROUGH HOLE MOUNT				200 nA			850		Photo Transistors	80 Cel		-40 Cel		.09 W			.05 A
SFH3100F	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			920		Photo Transistors	85 Cel		-40 Cel				e0	.05 A
BPX38	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880		Photo Transistors	125 Cel		-55 Cel				e0	.05 A
BPX38-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			870	.000009 s	Photo Transistors	85 Cel		-40 Cel		.33 W		e0	.05 A
SFH501-2	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			840	.00004 s	Photo Transistors	100 Cel		-55 Cel		.125 W		e0	.02 A
BPX43	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880		Photo Transistors	125 Cel		-55 Cel				e0	.05 A
BPX43-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880	.000018 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BPX43-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880	.000009 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
SFH500	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			825	.00000000025 s	Photo Transistors	100 Cel		-55 Cel		.1 W		e0	.02 A
BPX38-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870	.000015 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BPX43-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880	.000012 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BPX38-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870	.000012 s	Photo Transistors	85 Cel		-40 Cel		.33 W		e0	.05 A
LPD80A	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA					Photo Transistors	100 Cel		-40 Cel		.1 W		e0
BPX38-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870	.000015 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BP103B4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						850	.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W		e0	.05 A
BP103-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000009 s	Photo Transistors	85 Cel		-40 Cel		.3 W		e0	.1 A
BP103	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		Photo Transistors	80 Cel		-40 Cel				e0	.1 A
BP103B3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						850	.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W		e0	.05 A
BP103-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000007 s	Photo Transistors	85 Cel		-40 Cel		.3 W		e0	.1 A
LPT85A	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			870		Photo Transistors	100 Cel		-40 Cel		.1 W		e0	.05 A
BP103-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000005 s	Photo Transistors	85 Cel		-40 Cel		.3 W		e0	.1 A
BP103-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000009 s	Photo Transistors	85 Cel		-40 Cel		.3 W		e0	.1 A
BP103B2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						850	.0000075 s	Photo Transistors	100 Cel		-55 Cel		.2 W		e0	.05 A
BP103BF4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			900	.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W		e0	.05 A
BP103-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000009 s	Photo Transistors	85 Cel		-40 Cel		.3 W		e0	.1 A
SFH501-1	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			840	.000024 s	Photo Transistors	100 Cel		-55 Cel		.125 W		e0	.02 A
BPX38-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870	.000015 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BP103BF3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			900	.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W		e0	.05 A
BPX43-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880	.000015 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BPX43-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880	.000022 s	Photo Transistors	125 Cel		-55 Cel		.33 W		e0	.05 A
BP103BF2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			900	.0000075 s	Photo Transistors	100 Cel		-55 Cel		.2 W		e0	.05 A
SFH309FA2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000005 s	Photo Transistors	100 Cel		-55 Cel		.165 W		e0	.015 A
SFH325-3	Infineon Technologies	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	2.4 mm	200 nA	1	YES	860	.000007 s	Photo Transistors	100 Cel	ROUND	-40 Cel	35 V	.165 W	.65 mA		.015 A

Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.