SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	Total Dose (V)	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
TRF8010PWP	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS				10 dBm	6			3/5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-40 Cel				870 MHz	925 MHz
TRF1123IRTMR	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY				1	20 dBm		700 mA	COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2100 MHz	2700 MHz
THS9000DRWT	Texas Instruments	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY				1			100 mA	COMPONENT	5		50 ohm		85 Cel	15.7 dB	-40 Cel	NICKEL PALLADIUM GOLD SILVER		e4	50 MHz	400 MHz
THS9001DBVT	Texas Instruments	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY				1			100 mA	COMPONENT	5		50 ohm		85 Cel	15.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	350 MHz
TRF1123IRTMTG3	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY				1	20 dBm		700 mA	COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2100 MHz	2700 MHz
TRF1223IRTMR	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY				1	20 dBm		950 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	3300 MHz	3800 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS			1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	11000 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS			1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	10 MHz	11000 MHz
5962R2122001VXC	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12		BICMOS	MIL-PRF-38535; MIL-STD-883		1				COMPONENT	3.3		50 ohm		125 Cel	12.5 dB	-40 Cel		RH - 100K Rad(Si)		10 MHz	6500 MHz
TRF37D73IDSGR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		65 mA	COMPONENT	3.3		50 ohm		85 Cel	20 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	1 MHz	6000 MHz
TRF37A75IDSGR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		95 mA	COMPONENT	5		50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	6000 MHz
TRF37B75IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		85 mA	COMPONENT	5		50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	4000 MHz
CC2590RGVT	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY				1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
TRF37C75IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		85 mA	COMPONENT	5		50 ohm		85 Cel	18 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	4000 MHz
TRF37B75IDSGR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		85 mA	COMPONENT	5		50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	4000 MHz
TRF37C73IDSGR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		65 mA	COMPONENT	3.3		50 ohm		85 Cel	18 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	1 MHz	6000 MHz
TRF37C75IDSGR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY				1	10 dBm		85 mA	COMPONENT	5		50 ohm		85 Cel	18 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	4000 MHz
ADPA7007AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS			1	27 dBm	1.29		COMPONENT	5		50 ohm		85 Cel	18.5 dB	-40 Cel				20000 MHz	44000 MHz
ADH8410-000C	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4					1	20 dBm		70 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-40 Cel				10 MHz	10000 MHz
ADPA7002C-KIT	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	22		GAAS			1	25 dBm			COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	12 dB	-55 Cel				20000 MHz	44000 MHz
ADPA7009CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT			1	20 dBm	1.17		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	17.5 dB	-55 Cel				20000 MHz	54000 MHz
ADPA7007CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT			1	18 dBm		1400 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	18 dB	-55 Cel				18000 MHz	44000 MHz
ADPA1107ACPZN	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN			1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm		85 Cel	27 dB	-40 Cel				4800 MHz	6000 MHz
ADPA1105ACGZN-R7	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN			1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
ADH519R701LSH6	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS	MIL-PRF-38535 Class V	100k Rad(Si)	1	20 dBm	2.1	95 mA	COMPONENT	3		50 ohm		85 Cel	9.5 dB	-40 Cel				17500 MHz	31500 MHz
ADPA7002AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC	GAAS			1	25 dBm			COMPONENT	5		50 ohm		85 Cel	13.5 dB	-40 Cel				18000 MHz	44000 MHz
ADPA7009C-KIT	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT			1	20 dBm	1.17		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	17.5 dB	-55 Cel				20000 MHz	54000 MHz
ADPA7004CHIP-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT			1	18 dBm	1.15		COMPONENT	-0.4,3.5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-55 Cel				40000 MHz	80000 MHz
ADCA3270ACEZ	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	9		PHEMT			1			500 mA	COMPONENT	24		75 ohm		110 Cel	23 dB	-30 Cel				45 MHz	1218 MHz
ADPA7004CHIPS	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT			1	18 dBm	1.15		COMPONENT	-0.4,3.5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-55 Cel				40000 MHz	80000 MHz
PPA4213	Analog Devices		SURFACE MOUNT	4	METAL	GAAS								8	QFL4,.4SQ		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
ADCA3270ACEZ-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	9		PHEMT			1			500 mA	COMPONENT	24		75 ohm		110 Cel	23 dB	-30 Cel				45 MHz	1218 MHz
ADPA1107ACPZN-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN			1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm		85 Cel	27 dB	-40 Cel				4800 MHz	6000 MHz
PPA18222	Analog Devices		SURFACE MOUNT	4	METAL	GAAS								9	QFL4,.25SQ		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
ADPA1106ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN			1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	33.5 dB	-40 Cel				2700 MHz	3500 MHz
ADPA1106ACGZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN			1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	33.5 dB	-40 Cel				2700 MHz	3500 MHz
MAX3524EVB+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY				1	0 dBm		95 mA	COMPONENT	5	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	7.6 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	44 MHz	880 MHz
MAX3524EVB	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY				1	0 dBm		95 mA	COMPONENT	5	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	7.6 dB	-40 Cel	TIN LEAD		e0	44 MHz	880 MHz
HMC441LP3RTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			1			115 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
AD8353ACP-REEL7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			1	10 dBm		52 mA	COMPONENT	3/5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.6 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	1 MHz	2700 MHz
HMC464LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS			1	20 dBm			COMPONENT	3,8	LCC32,.2SQ,20	50 ohm		85 Cel	8 dB	-40 Cel				2000 MHz	20000 MHz
HMC465LP5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS			1	23 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	TIN LEAD		e0	0 MHz	20000 MHz
HMC491LP3	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			1	30 dBm			COMPONENT	3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	3400 MHz	3800 MHz
HMC639ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS			1	15 dBm		120 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel				200 MHz	4000 MHz
HMC669LP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			1			105 mA		3/5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC415LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR			1	13 dBm			COMPONENT	3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4900 MHz	5900 MHz
HMC414MS8G	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			1	17 dBm			COMPONENT	3.6/5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	2200 MHz	2800 MHz
HMC471MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			2	14 dBm			COMPONENT	8	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	5000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.