Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
|||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
TIN |
e3 |
1030 MHz |
1090 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
412 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
MATTE TIN |
e3 |
||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
50 MHz |
1300 MHz |
|||||||
|
Qorvo |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
3.9 |
SL,4LEAD,.07SQ |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HEMT |
1 |
15 |
COMPONENT |
28 |
SOLCC8,.23 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
20 MHz |
1000 MHz |
||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HEMT |
1 |
15 |
COMPONENT |
28 |
SOLCC8,.23 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
20 MHz |
1000 MHz |
||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
4 |
GAN |
1 |
18 dBm |
3 |
COMPONENT |
20 |
DIE OR CHIP |
50 ohm |
23 dB |
28000 MHz |
38000 MHz |
||||||||||||
|
Qorvo |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
E-PHEMT |
AEC-Q100 |
1 |
30 dBm |
2.2 |
68 mA |
COMPONENT |
4.5 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
18.1 dB |
-40 Cel |
2320 MHz |
2345 MHz |
|||||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
23 mA |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.1 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
23 mA |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
SOLCC6,.06,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
4900 MHz |
5900 MHz |
||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.4 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
3500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
32 dBm |
1.43 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
25 MHz |
12000 MHz |
||||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
6 |
CERAMIC |
PHEMT |
1 |
3 |
1000 mA |
COMPONENT |
28 |
50 ohm |
105 Cel |
31 dB |
-40 Cel |
5200 MHz |
5900 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
MATTE TIN |
e3 |
3100 MHz |
3900 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
10000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
TE Connectivity |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
100 mA |
10 |
SOP8(UNSPEC) |
RF/Microwave Amplifiers |
100 Cel |
-55 Cel |
||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
4.5 |
200 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
|||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
1.17 |
300 mA |
COMPONENT |
5.6 |
TO-243 |
50 ohm |
18 dB |
40 MHz |
3600 MHz |
||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
23 dBm |
77 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.8 dB |
-40 Cel |
40 MHz |
2600 MHz |
|||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
5 dBm |
650 mA |
COMPONENT |
5 |
LCC20,.16SQ,20 |
50 ohm |
105 Cel |
29.5 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
4900 MHz |
5900 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
46 mA |
COMPONENT |
4.2 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.9 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
50 MHz |
6000 MHz |
||||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
83 mA |
COMPONENT |
4 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
0 MHz |
5500 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
23 mA |
COMPONENT |
2.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.8 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
83 mA |
COMPONENT |
4 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5500 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.3 dB |
-40 Cel |
50 MHz |
4000 MHz |
|||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
GAN |
1 |
25 dBm |
10 |
400 mA |
COMPONENT |
-2.8,28 |
DIE OR CHIP |
50 ohm |
275 Cel |
27 dB |
2000 MHz |
6000 MHz |
||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
5 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5.4 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
0 dBm |
1.22 |
14.4 mA |
COMPONENT |
1.8 |
SOLCC6,.04,20 |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
1559 MHz |
1610 MHz |
|||||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5.5 mA |
2.7 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
||||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
22.2 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
21.1 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
160 mA |
COMPONENT |
4 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
Nickel/Gold (Ni/Au) |
LOW NOISE |
e4 |
7000 MHz |
21000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
220 mA |
COMPONENT |
6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
GOLD NICKEL |
e4 |
2000 MHz |
4000 MHz |
||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
6000 MHz |
||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
GAAS |
1 |
20 dBm |
120 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
100 Cel |
16.3 dB |
-55 Cel |
ULTRA LOW NOISE |
2000 MHz |
3000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
18 dBm |
390 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
85 Cel |
24.7 dB |
-40 Cel |
MATTE TIN |
e3 |
1800 MHz |
2700 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
86 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
20.1 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
28 dBm |
960 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
MATTE TIN |
e3 |
400 MHz |
2400 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
250 mA |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
4000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.