Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAN |
1 |
24 dBm |
3 |
COMPONENT |
LCC20,.16SQ,20 |
50 ohm |
24 dB |
2000 MHz |
6000 MHz |
||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
55 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
7000 MHz |
15000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
10000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
PHEMT |
1 |
0 dBm |
1.92 |
65 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
6000 MHz |
26500 MHz |
||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
GAN |
1 |
25 dBm |
10 |
400 mA |
MODULE |
-2.8,28 |
50 ohm |
26 dB |
2000 MHz |
6000 MHz |
||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
|||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
13 dBm |
78 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
10 MHz |
6000 MHz |
||||||
|
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.22 |
525 mA |
COMPONENT |
12 |
SOP16,.4 |
75 ohm |
RF/Microwave Amplifiers |
9.5 dB |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
1000 MHz |
|||||||
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.22 |
525 mA |
COMPONENT |
12 |
SOP16,.4 |
75 ohm |
RF/Microwave Amplifiers |
9.5 dB |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
50 MHz |
1000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
8000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
21000 MHz |
32000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Frequency Multipliers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
8000 MHz |
21000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
22 |
PHEMT |
1 |
50 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
85 Cel |
19.5 dB |
-55 Cel |
71000 MHz |
86000 MHz |
|||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
|||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
82 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
17.5 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
1.9 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-45 Cel |
0 MHz |
8000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
3 |
LCC8,.08SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
800 MHz |
3800 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
34 mA |
COMPONENT |
3/5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
MATTE TIN |
e3 |
1 MHz |
2700 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
70 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
150 Cel |
24.8 dB |
-40 Cel |
MATTE TIN |
e3 |
30 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
18 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
20 dBm |
75 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
7000 MHz |
14000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
15 dBm |
95 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
2000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
2 |
126 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
3300 MHz |
3800 MHz |
|||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
14 dBm |
83 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
29 dB |
MATTE TIN |
e3 |
400 MHz |
1000 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
50 MHz |
1300 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
2 |
130 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
24 dB |
-40 Cel |
2300 MHz |
5000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC12,.2SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
GOLD OVER NICKEL |
HIGH RELIABILITY |
e4 |
7000 MHz |
15500 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
15 dBm |
95 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
2000 MHz |
18000 MHz |
||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
CERAMIC |
PHEMT |
1 |
18 dBm |
1100 mA |
COMPONENT |
5.5 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
15000 MHz |
20000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
PHEMT |
1 |
15 dBm |
1.43 |
COMPONENT |
6 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
27500 MHz |
31000 MHz |
|||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
PHEMT |
1 |
18 dBm |
1.67 |
COMPONENT |
6 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
27500 MHz |
31000 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
50 MHz |
1300 MHz |
||||||
|
Qorvo |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAN |
1 |
29 dBm |
3 |
COMPONENT |
LCC28,.24SQ,25 |
50 ohm |
85 Cel |
31 dB |
-40 Cel |
2800 MHz |
3500 MHz |
||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
29 mA |
COMPONENT |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
|||||||||
|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
130 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-55 Cel |
MATTE TIN |
e3 |
4000 MHz |
11000 MHz |
|||||||
|
Infineon Technologies |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
7.2 mA |
3 |
LCC7(UNSPEC) |
RF/Microwave Amplifiers |
Gold (Au) |
e4 |
|||||||||||||||
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
2000 MHz |
20000 MHz |
||||||
Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-25 Cel |
0 MHz |
1800 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
20 mA |
COMPONENT |
3.5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
800 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
98 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
850 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.