SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SBF-4089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	19 dBm		98 mA	COMPONENT	4.9	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	MATTE TIN		e3	0 MHz	500 MHz
MGA-87563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.8		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn)		e3	500 MHz	4000 MHz
TQP3M9018	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	23 dBm		100 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	50 MHz	4000 MHz
XP1035-QH-0G0T	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		15 dBm			COMPONENT	6	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-55 Cel	MATTE TIN		e3	5900 MHz	9500 MHz
ADL5611ARKZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	20 dBm		124 mA	COMPONENT	5	TO-243	50 ohm		105 Cel	14.3 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	30 MHz	6000 MHz
MMG3014NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		160 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.5 dB		MATTE TIN		e3	40 MHz	4000 MHz
QPA2735TR7X	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		105 mA	COMPONENT	3.5	LCC16,.16SQ,20	50 ohm		85 Cel	26 dB	-40 Cel				13750 MHz	18000 MHz
SKY65111-348LF	Skyworks Solutions	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	8		COMPONENT	3.5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel	39.5 dB	-40 Cel	TIN		e3	600 MHz	1100 MHz
RF3827SR	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			130 mA		8	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
AMMP-6220-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	15 dBm		70 mA	COMPONENT	3	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		22 dB		Nickel/Gold (Ni/Au)		e4	6000 MHz	20000 MHz
TQL9092	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	33 dBm		85 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		105 Cel	21 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	600 MHz	4200 MHz
HMC902LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				5000 MHz	10000 MHz
MSA-1105	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers	85 Cel		-25 Cel	Tin (Sn)		e3	50 MHz	1300 MHz
BGA2870,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			18.5 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
HMC462LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	2000 MHz	20000 MHz
HMC516LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1			88 mA		3	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC634LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				5000 MHz	20000 MHz
HMC634LC4TR-R5	Analog Devices		SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC8325-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT	1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm		85 Cel	19.5 dB	-55 Cel				71000 MHz	86000 MHz
MGA-61563-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	18 dBm	2	48 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		6.9 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
MSA-1105-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	1300 MHz
RF6886TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
RFPA3800TR13	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	28 dBm	5	700 mA	COMPONENT	7	SOP8,.25		RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel		LOW NOISE		150 MHz	960 MHz
AD8353ACPZ-REEL7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		52 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.6 dB	-40 Cel	MATTE TIN		e3	1 MHz	2700 MHz
RF6886TR13	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
MAALSS0044TR-3000	TE Connectivity		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1			11 mA		3/5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-40 Cel
MGA-82563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.2	101 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	8.8 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	100 MHz	6000 MHz
SGA-3363Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5500 MHz
SGA3363Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				0 MHz	5500 MHz
ABA-52563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	20 dBm	1.4	43 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
HMC8412LP2FE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
QPM1000	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	18			1	33 dBm			COMPONENT	5		50 ohm		85 Cel	17 dB	-40 Cel				2000 MHz	20000 MHz
TRF37A75IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm			COMPONENT	5		50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	40 MHz	6000 MHz
AFIC901NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1		25		COMPONENT	7.5	LCC24,.16SQ,20	50 ohm		150 Cel	31.2 dB	-40 Cel	TIN		e3	1.8 MHz	1000 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
HMC1114PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
HMC635LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	15 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	70 Cel	15 dB	-55 Cel	GOLD OVER NICKEL		e4	18000 MHz	40000 MHz
NBB-300-T1	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	BIPOLAR	1	20 dBm	2.5		COMPONENT	3.9	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-45 Cel	Matte Tin (Sn)		e3	0 MHz	12000 MHz
QPA1019D	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	7		GAN	1	25 dBm	4	2000 mA	COMPONENT	22	DIE OR CHIP	50 ohm		85 Cel	34.4 dB	-40 Cel				4500 MHz	7000 MHz
HMC1087F10	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	CERAMIC	GAN	1	34 dBm	6		COMPONENT	28		50 ohm		85 Cel	11 dB	-40 Cel				2000 MHz	20000 MHz
HMC498LC4	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	GOLD OVER NICKEL	POWER AMPLIFIER WITH LNA	e4	17000 MHz	24000 MHz
PMA3-14LN+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	PHEMT	1	12 dBm	1.22	90 mA	COMPONENT	6		50 ohm		85 Cel	20.3 dB	-40 Cel				50 MHz	10000 MHz
ABA-52563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	20 dBm	1.4	43 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
MGA-635P8-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm		71 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Tin (Sn)		e3	2300 MHz	4000 MHz
MSA-0686-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	20 mA	COMPONENT	3.5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		16.5 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	800 MHz
RF6886SR	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
ERA-5SM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY		1	13 dBm	1.3	65 mA	COMPONENT	4.2	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-45 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	4000 MHz
ERA-5SM+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY		1	13 dBm	1.3	65 mA	COMPONENT	4.2	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-45 Cel	TIN SILVER OVER NICKEL		e2	0 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.