SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
ADL8107ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	22 dBm	1.54		COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	18 dB	-40 Cel				6000 MHz	18000 MHz
HMC441LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	6500 MHz	13500 MHz
HMC960LP4ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
HMC451LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	18000 MHz
HMC635LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	70 Cel		-55 Cel
RF3827	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	20	130 mA	COMPONENT	8	LCC16,.12SQ,20	75 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN		e3	5 MHz	1500 MHz
HMC311SC70ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	8000 MHz
HMC451LC3TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel				5000 MHz	20000 MHz
MGA-81563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
HMC8412LP2FETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
935373852528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	Tin (Sn)		e3	3200 MHz	4000 MHz
MMG20241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB		MATTE TIN		e3	450 MHz	3800 MHz
RF5110G	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	10		COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 800 TO 950 MHZ	e3	880 MHz	915 MHz
HMC1040LP3CETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	5 dBm		85 mA	COMPONENT	2.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				24000 MHz	43500 MHz
QPA1010D	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	12		GAN	1	30 dBm	3	600 mA	COMPONENT	-1.9,24	DIE OR CHIP	50 ohm			23.1 dB					7900 MHz	11000 MHz
ADL5521ACPZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm		65 mA	COMPONENT	3/5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	400 MHz	4000 MHz
HMC549MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	0 dBm			COMPONENT	5	TSOP8,.3,38	75 ohm	RF/Microwave Amplifiers	85 Cel	2 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	960 MHz
HMC994ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1			300 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm			11 dB		Matte Tin (Sn)		e3		28000 MHz
MMG15241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	23 dBm		105 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		MATTE TIN	LOW NOISE	e3	500 MHz	2800 MHz
HMC326MS8GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3000 MHz	4500 MHz
HMC8413LP2FETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6		PHEMT	1	25 dBm	1.29		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	9000 MHz
MAX2232EEE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	1.5		COMPONENT	3/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23.9 dB	-40 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e0	800 MHz	1000 MHz
MGA-61563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	18 dBm	2	48 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		6.9 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
HMC462LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			84 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
HMC505LP4E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	6800 MHz	7400 MHz
MW7IC008NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	2	38 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		21.5 dB		MATTE TIN		e3	100 MHz	1000 MHz
TQP3M9037	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	22 dBm		90 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	105 Cel	18.5 dB	-40 Cel				700 MHz	6000 MHz
SBB-4089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
SBB4089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
QPL9547TR7	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	22 dBm	1.54	100 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			17.5 dB		Nickel/Palladium/Gold (Ni/Pd/Au)		e4	100 MHz	6000 MHz
HMC960LP4E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
AG303-86G	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20.4 dB	-40 Cel	MATTE TIN	HIGH RELIABILITY	e3	0 MHz	6000 MHz
HMC451LC3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		114 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD OVER NICKEL	SMA	e4	5000 MHz	20000 MHz
HMC549MS8GTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
QPA1003P	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	29		GAN	1	18 dBm	3	650 mA	COMPONENT	28		50 ohm			31.4 dB		Gold (Au) - with Nickel (Ni) barrier		e4	1000 MHz	8000 MHz
CC2590RGVR	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
HMC634LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel	GOLD OVER NICKEL		e4	5000 MHz	20000 MHz
BGA3018,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			135 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
MGA-81563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
RF5110GSR	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		HYBRID	1	13 dBm	10	2400 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	33 dB	-40 Cel	Matte Tin (Sn)		e3	150 MHz	960 MHz
ADL8107ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	22 dBm	1.54		COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	18 dB	-40 Cel				6000 MHz	18000 MHz
HMC460LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	18 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	GOLD OVER NICKEL		e4	0 MHz	20000 MHz
MHT2012NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	20 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm		150 Cel	29.7 dB	-40 Cel	TIN		e3	2400 MHz	2500 MHz
TRF37D73IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		65 mA	COMPONENT	3.3		50 ohm		85 Cel	20 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	1 MHz	6000 MHz
HMC8413LP2FE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6		PHEMT	1	25 dBm	1.29		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	9000 MHz
QPA1010	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	25	PLASTIC/EPOXY	GAN	1	30 dBm	3	600 mA	COMPONENT	-1.8,24	LCC24,.18X.2,20	50 ohm			21.1 dB					7900 MHz	11000 MHz
BGA6130,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY		1			250 mA		3.6	SOLCC8,.12,20		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD		e4

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.