SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC462	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3		PHEMT		1	18 dBm	1.25	84 mA	COMPONENT	5	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-55 Cel	GOLD		e4	2000 MHz	20000 MHz
HMC462LP5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1	18 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	2000 MHz	20000 MHz
HMC636ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	16 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	200 MHz	4000 MHz
MAAM-011112-000000	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			1	0 dBm		400 mA	COMPONENT	4	LCC16,.12SQ,20	50 ohm		85 Cel	21 dB	-40 Cel	MATTE TIN		e3	20000 MHz	37000 MHz
MGA-13516-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	20 dBm		140 mA	COMPONENT	5	LCC16,.16SQ,25		RF/Microwave Amplifiers		30.2 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-13516-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	20 dBm		140 mA	COMPONENT	5	LCC16,.16SQ,25		RF/Microwave Amplifiers		30.2 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-13516-TR2G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	20 dBm		140 mA	COMPONENT	5	LCC16,.16SQ,25		RF/Microwave Amplifiers		30.2 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-31689-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	15 dBm		195 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16.6 dB		Tin (Sn)	LOW NOISE	e3	1500 MHz	3000 MHz
MGA-31689-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	15 dBm		195 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16.6 dB		Tin (Sn)	LOW NOISE	e3	1500 MHz	3000 MHz
MGA-85563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	13 dBm	1.3	20 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	6000 MHz
MGA-86576-STRG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS		1	13 dBm	2.5	22 mA	COMPONENT	5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)		e3	1500 MHz	8000 MHz
MGA-86576-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS			13 dBm	2.5	22 mA	COMPONENT	5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		20 dB					1500 MHz	8000 MHz
MSA-3111-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	500 MHz
MSA-3111-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-3111-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			13 dBm	1.2	40 mA	COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	23.5 dB	-25 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	500 MHz
MSA-3111-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-3111-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
NPA1003QAR	M/a-com Technology Solutions		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	LCC16,.16SQ,25		RF/Microwave Amplifiers
QPA2966D	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	8		GAN		1	37 dBm	3		COMPONENT	22	DIE OR CHIP	50 ohm		85 Cel	18.4 dB	-40 Cel				2000 MHz	20000 MHz
QPA9426TR13	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY			1	10 dBm	10	900 mA	COMPONENT	4.5	SOLCC14,.28,42	50 ohm		85 Cel	30.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	2700 MHz
QPA9908TR13	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			1	10 dBm	1.22		COMPONENT	5	LCC16,.2SQ,32	50 ohm			30 dB					850 MHz	960 MHz
RDA1005LTR13	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
RDA1005LTR7	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
RF2172TR7	Rf Micro Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1					3.6	LCC16,.16SQ,32		RF/Microwave Amplifiers
RFPA2189TR13	Qorvo		SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1					5	TO-243		RF/Microwave Amplifiers
SBB2089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	24 dBm		98 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	850 MHz
SKY65015-70LF	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm	2		COMPONENT	4.7	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel					6000 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN		1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
ADPA7007AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS		1	27 dBm	1.29		COMPONENT	5		50 ohm		85 Cel	18.5 dB	-40 Cel				20000 MHz	44000 MHz
BGU6101,147	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1			10 mA	COMPONENT	3	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel	4 dB	-40 Cel	TIN		e3	40 MHz	4000 MHz
BGU6102,147	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			21 mA		3	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGU7041,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1					3.3	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	Tin (Sn)		e3
BGU7044,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.67	38 mA	COMPONENT	3.3	TSSOP6,.08	75 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	TIN		e3	40 MHz	1000 MHz
CMA-5043+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	E-PHEMT		1	17 dBm	1.38	66 mA	COMPONENT	5		50 ohm		105 Cel	16.5 dB	-55 Cel		HIGH RELIABILITY		50 MHz	4000 MHz
CMD316C3	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	16				1	20 dBm		130 mA	COMPONENT	4	LCC16,.1SQ,20	50 ohm		85 Cel	15 dB	-40 Cel				6000 MHz	20000 MHz
GALI-51+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	13 dBm	1.7		COMPONENT	4.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-45 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	4000 MHz
GALI-51	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	13 dBm	1.7		COMPONENT	4.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	4000 MHz
GALI-51F+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.7		COMPONENT	4.4	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-45 Cel	Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier	HIGH RELIABILITY	e2	0 MHz	4000 MHz
GALI-51F	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	13 dBm	1.7		COMPONENT	4.4	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	4000 MHz
GRF2071	Guerrilla Rf	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	PHEMT		1	23 dBm	2		COMPONENT	5	SOLCC8,.08,20			105 Cel	18 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	700 MHz	2700 MHz
HMC311LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	6000 MHz
HMC311LP3TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			74 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC311ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1			74 mA		5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC342LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS		1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC383LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		1			135 mA		5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC409LP4ETR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3300 MHz	3800 MHz
MGA-23003-TR1G	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel				3300 MHz	3800 MHz
MGA-30889-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	20 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.6 dB		Matte Tin (Sn)		e3	40 MHz	2600 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.