Analog Devices - MAX2371ETC+T

Analog Devices' HMC441LC3B is a wide band medium power RF amplifier with 10 dB gain, operating from 6-18 GHz. It has a max input power of 15 dBm and operates on a 5V supply, drawing 115 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

Analog Devices' HMC694LP4ETR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and is designed for wideband low-power applications in RF & microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting.

Qorvo's RF6886TR7 is a wide band high power amplifier with 31dB gain, operating from 433MHz to 470MHz. It has a max input power of 12dBm and VSWR of 5, suitable for RF applications requiring high power amplification in the frequency range. The component is designed for surface mount installation in various electronic systems.

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.

HELA-10D+ by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, operating from 8 MHz to 300 MHz. It offers a max input power of 20 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring high performance amplification in a compact form factor.

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

Analog Devices' HMC8410LP2FETR is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

ALM-1412-BLKG by Broadcom is a GAAS RF amplifier with 11dB gain, operating from 0-1575MHz. It has a max input power of 15dBm and requires 1/2.85V supply. Ideal for wideband low-power applications due to its 50Ω impedance and plastic/epoxy package construction.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Power Supplies (V): +-15;

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC7950LS6 is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 3400 MHz; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Minimum Operating Temperature: -40 Cel;

NARROW BAND LOW POWER;

WIDE BAND LOW POWER;

XF1001-SC-0G00 by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Gain: 6.5 dB; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz;