THROUGH HOLE MOUNT RF & Microwave Amplifiers 26

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
RA07H4047M-501	Mitsubishi Electric	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	4	PLASTIC/EPOXY	HYBRID	1	14.77 dBm	4		MODULE	12.5	MODULE,4LEAD,.74	50 ohm		90 Cel	25.22 dB	-30 Cel			400 MHz	470 MHz
LM703LN	National Semiconductor		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR							DIP8,.3		RF/Microwave Amplifiers	70 Cel		0 Cel	Tin/Lead (Sn/Pb)	e0
OM320	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
OM336	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
OM321	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
OM926	NXP Semiconductors		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	HYBRID						12	SIP8,.06		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
OM339	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
SA5219N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				50 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel			0 MHz	700 MHz
OM323	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID				105 mA		24	SIP10,.07TB		RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0
SA5209N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				55 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel			0 MHz	850 MHz
OM335	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
MHW1915	NXP Semiconductors	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	7			1	17 dBm	2		COMPONENT	5,26		50 ohm		85 Cel	29 dB	-30 Cel			1930 MHz	1990 MHz
MC-5809	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0
MC5157	Renesas Electronics		THROUGH HOLE MOUNT	11	PLASTIC/EPOXY	HYBRID	1			44 mA		12	SIP11,.1		RF/Microwave Amplifiers	65 Cel		-30 Cel
MC-5809M	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0
UPC1655C	Renesas Electronics	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				25 mA		5	DIP8,.3		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
MC-5805	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID				47 mA		10	SIP11,.1		RF/Microwave Amplifiers	65 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0
MC-5806A	Renesas Electronics		THROUGH HOLE MOUNT	6	METAL	HYBRID						3	QUIP6A,.4/.6,80		RF/Microwave Amplifiers	70 Cel		-50 Cel	Tin/Lead (Sn/Pb)	e0
MC-5809N	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0
UPC1656C	Renesas Electronics		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				48 mA		10	DIP8,.3		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)	e0
MC-5806B	Renesas Electronics		THROUGH HOLE MOUNT	6	METAL	HYBRID						3	QUIP6A,.4/.6,80		RF/Microwave Amplifiers	70 Cel		-50 Cel	Tin/Lead (Sn/Pb)	e0
MC5156	Renesas Electronics		THROUGH HOLE MOUNT	11	PLASTIC/EPOXY	HYBRID	1			67 mA		12	SIP11,.1		RF/Microwave Amplifiers	65 Cel		-30 Cel
UPC1679G	Renesas Electronics		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR						5	DIP8,.3		RF/Microwave Amplifiers	85 Cel		-45 Cel	Tin/Lead (Sn/Pb)	e0
UPC1677C	Renesas Electronics	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				93 mA		5	DIP8,.3		RF/Microwave Amplifiers	85 Cel		-45 Cel	Tin/Lead (Sn/Pb)	e0
UPC1658C	Renesas Electronics		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				18 mA		10	DIP8,.3		RF/Microwave Amplifiers	70 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
MC-5809L	Renesas Electronics		THROUGH HOLE MOUNT	11		HYBRID						12	SIP11,.1		RF/Microwave Amplifiers	80 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.