NXP Semiconductors - OM339

  1. Home
  2. NXP Semiconductors - OM339
OM339 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number OM339
Description RF/Microwave Amplifiers; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SIP10,.2;
Datasheet OM339 Datasheet
In Stock2,070
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Terminals: 10
Package Equivalence Code: SIP10,.2
Technology: HYBRID
Maximum Operating Temperature: 70 Cel
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -20 Cel
Power Supplies (V): 24
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,070 - -

Popular Products

Category Top Products

PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.
BGA2817,115 by NXP Semiconductors

BGA2817,115

NXP Semiconductors

NXP Semiconductors' BGA2817,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and max operating temp of 85°C. It features surface mounting and tin terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
MGA-635P8-BLKG by Broadcom

MGA-635P8-BLKG

Broadcom

Broadcom's MGA-635P8-BLKG is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and requires a 5V power supply. Ideal for wideband medium-power applications, it features surface mounting and operates in temperatures ranging from -40 to 85°C.
SGA-3363 by Rf Micro Devices

SGA-3363

Rf Micro Devices

SGA-3363 by RF Micro Devices is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, has a max input power of 18 dBm, and requires a 2.6V power supply. This component is ideal for applications requiring high-frequency signal amplification in compact electronic devices.
ADL8142ACPZN-R7-CSL by Analog Devices

ADL8142ACPZN-R7-CSL

Analog Devices

WIDE BAND LOW POWER;
SBB2089ZSR by Rf Micro Devices

SBB2089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
RF3931 by Rf Micro Devices

RF3931

Rf Micro Devices

RF3931 by Rf Micro Devices is a ceramic module with a wide band high power RF or microwave device type. It has a max input power of 37 dBm and a gain of 15 dB. This amplifier operates within a frequency range of 0 MHz to 3000 MHz and is suitable for various RF and microwave applications.
SP9711 by Amplifonix

SP9711

Amplifonix

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;
MGA-62563-TR1 by Broadcom

MGA-62563-TR1

Broadcom

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.
HMC465LP5E by Analog Devices

HMC465LP5E

Analog Devices

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
NPA1003QAR by Nitronex

NPA1003QAR

Nitronex

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: LCC16,.16SQ,25;
ADL8106ACEZ-R7 by Analog Devices

ADL8106ACEZ-R7

Analog Devices

WIDE BAND LOW POWER;
MGA-72543-BLK by Hewlett Packard

MGA-72543-BLK

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; Gain: 9.2 dB; Characteristic Impedance: 50 ohm;
HMC952ALP5GETR by Analog Devices

HMC952ALP5GETR

Analog Devices

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
MAX2232EEE+ by Analog Devices

MAX2232EEE+

Analog Devices

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.
TRF37D73IDSGT by Texas Instruments

TRF37D73IDSGT

Texas Instruments

TRF37D73IDSGT by Texas Instruments is a wide band low power RF amplifier with 20dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply with a current draw of 65mA. Ideal for applications requiring high frequency amplification in compact designs.
HMC8413LP2FETR by Analog Devices

HMC8413LP2FETR

Analog Devices

HMC8413LP2FETR by Analog Devices is a wide band medium power RF amplifier with 17 dB gain, suitable for frequencies ranging from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, making it ideal for RF and microwave applications requiring high performance amplification in the temperature range of -40°C to 85°C.
MGA-81563-TR1G by Agilent Technologies

MGA-81563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;