Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
6000 MHz |
17000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
17.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
6000 MHz |
17000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
HYBRID |
1 |
13 dBm |
10 |
2400 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
33 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
150 MHz |
960 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
6500 MHz |
13500 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
20 |
130 mA |
COMPONENT |
8 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20.5 dB |
-40 Cel |
LOW NOISE |
5 MHz |
1500 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
6500 MHz |
13500 MHz |
||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN LEAD |
e0 |
6500 MHz |
13500 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
18000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
20 |
130 mA |
COMPONENT |
8 |
LCC16,.12SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
e3 |
5 MHz |
1500 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
5000 MHz |
20000 MHz |
|||||||||
|
Qorvo |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
10 |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
Matte Tin (Sn) |
IT CAN ALSO OPERATE AT 800 TO 950 MHZ |
e3 |
880 MHz |
915 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
85 mA |
COMPONENT |
2.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
24000 MHz |
43500 MHz |
||||||||
Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
COMPONENT |
3/5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23.9 dB |
-40 Cel |
TIN LEAD |
IT CAN ALSO OPERATE AT 800 TO 1000 MHZ |
e0 |
800 MHz |
1000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
114 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
GOLD OVER NICKEL |
SMA |
e4 |
5000 MHz |
20000 MHz |
|||||
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
HYBRID |
1 |
13 dBm |
10 |
2400 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
33 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
150 MHz |
960 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
100 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
105 mA |
COMPONENT |
3.5 |
LCC16,.16SQ,20 |
50 ohm |
85 Cel |
26 dB |
-40 Cel |
13750 MHz |
18000 MHz |
|||||||||
|
Skyworks Solutions |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
8 |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
39.5 dB |
-40 Cel |
TIN |
e3 |
600 MHz |
1100 MHz |
||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
130 mA |
8 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
5000 MHz |
10000 MHz |
||||||||
|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
130 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-55 Cel |
MATTE TIN |
e3 |
4000 MHz |
11000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
6000 MHz |
|||||||
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
1.4 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1700 MHz |
2500 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
10000 MHz |
||||||
|
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.22 |
525 mA |
COMPONENT |
12 |
SOP16,.4 |
75 ohm |
RF/Microwave Amplifiers |
9.5 dB |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
1000 MHz |
|||||||
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.22 |
525 mA |
COMPONENT |
12 |
SOP16,.4 |
75 ohm |
RF/Microwave Amplifiers |
9.5 dB |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
50 MHz |
1000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Frequency Multipliers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
8000 MHz |
21000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
3300 MHz |
3800 MHz |
|||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
2 |
130 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
24 dB |
-40 Cel |
2300 MHz |
5000 MHz |
||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
CERAMIC |
PHEMT |
1 |
18 dBm |
1100 mA |
COMPONENT |
5.5 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
15000 MHz |
20000 MHz |
||||||||
|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
130 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-55 Cel |
MATTE TIN |
e3 |
4000 MHz |
11000 MHz |
|||||||
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
6000 MHz |
||||||
|
Microchip Technology |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.5 dB |
-40 Cel |
MATTE TIN |
e3 |
700 MHz |
1000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
0 dBm |
400 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
20000 MHz |
37000 MHz |
||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
HEMT |
1 |
10 |
COMPONENT |
28 |
LCC16,.16SQ,20 |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
20 MHz |
1500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
5 dBm |
85 mA |
COMPONENT |
2.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
24000 MHz |
43500 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN LEAD |
e0 |
6500 MHz |
13500 MHz |
|||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
MATTE TIN OVER NICKEL |
e3 |
3100 MHz |
3900 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.