16 RF & Microwave Amplifiers 331

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHVIC2114R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MHVIC910HR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	10	150 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MHV5IC2215NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		23 dB					1500 MHz	2200 MHz
MHVIC2114NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MHVIC910HNR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	10		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MMG3004NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		275 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		15 dB					400 MHz	2200 MHz
MMG3005NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		520 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		14 dB					800 MHz	2200 MHz
CGY96	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			3		COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		32.5 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
BGA748L16	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		4	4 dBm		.002 mA	COMPONENT	2.8	LCC16,.10SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.8 dB	-30 Cel		LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ		869 MHz	894 MHz
CGY0918	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS					COMPONENT	3.5,-5	SOP16,.35,32		RF/Microwave Amplifiers		28 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	1785 MHz
CGY353	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		17 dBm			COMPONENT	7	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		21 dB		Tin/Lead (Sn/Pb)		e0	3425 MHz	3450 MHz
CGY93P	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		20 dBm	2.2		COMPONENT	3.5	SOP16,.35,32		RF/Microwave Amplifiers		29 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
BGA736L16	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		3	4 dBm			COMPONENT	2.8	LCC16,.10SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	3 dB	-30 Cel		LOW NOISE		869 MHz	894 MHz
BGA700L16	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	10 dBm		24 mA	COMPONENT	3.2	LCC16,.1SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-30 Cel		LOW NOISE		2400 MHz	2500 MHz
BGA734L16	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		3					2.8	LCC16,.10SQ,20		RF/Microwave Amplifiers	85 Cel		-30 Cel
CGY0819	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS					COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	1910 MHz
BGA748N16	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		4					2.8	LCC16,.10SQ,20		RF/Microwave Amplifiers	85 Cel		-30 Cel
CGY191	Infineon Technologies		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS						3.5	SOP16,.35,32		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
CGY81	Infineon Technologies		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS						3.5	SOP16,.35,32		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
CGY184	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			1.8		COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	40 dB		Tin/Lead (Sn/Pb)		e0
MAX2251EBE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	1.76		COMPONENT	3/5	BGA16,4X4,20	50 ohm	RF/Microwave Amplifiers	85 Cel	24.8 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	824 MHz	849 MHz
MAX2269EUE	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	6 dBm	2.5	100 mA	COMPONENT	2.7/4.5	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	887 MHz	925 MHz
MAX2267EUE	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	6 dBm	2.5	100 mA	COMPONENT	2.7/4.5	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	20.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	887 MHz	925 MHz
MAX2233EEE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	1.5		COMPONENT	3/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23.9 dB	-40 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e0	800 MHz	1000 MHz
MAX2430ISE	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		-3 dBm	8	70 mA		3.3/5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-20 Cel	Tin/Lead (Sn85Pb15)		e0	800 MHz	1000 MHz
MAX2251EBE-T	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	1.76		COMPONENT	3/5	BGA16,4X4,20	50 ohm	RF/Microwave Amplifiers	85 Cel	24.8 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	824 MHz	849 MHz
MAX2268EUE	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	6 dBm	2.5	90 mA	COMPONENT	2.7/4.5	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	887 MHz	925 MHz
MAX2430ISE-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	-3 dBm	8	70 mA		3.3/5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-20 Cel	Tin/Lead (Sn85Pb15)		e0	800 MHz	1000 MHz
F1478NLGA8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	21 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	27.9 dB	-40 Cel	Tin (Sn)		e3	1800 MHz	5000 MHz
F0109NBTI8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	20 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	TIN	LOW NOISE	e3	650 MHz	1000 MHz
F0110NBTI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1500 MHz	2300 MHz
F0111NBTI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16.5 dB	-40 Cel	TIN		e3	2200 MHz	4200 MHz
F1490NLGA8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	22 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33 dB	-40 Cel	TIN		e3	1800 MHz	6400 MHz
UPC8218T5A-E1-A	Renesas Electronics		SURFACE MOUNT	16	PLASTIC/EPOXY		3			30 mA		3	SOLCC16,.1,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
F1478NLGA	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	21 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	27.9 dB	-40 Cel	Tin (Sn)		e3	1800 MHz	5000 MHz
UPC8218T5A-E1	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		3	16 dBm		30 mA	COMPONENT	3	SOLCC16,.1,16		RF/Microwave Amplifiers	85 Cel	39.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
IT5061	Renesas Electronics		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1					5	LCC16,.16SQ,25		RF/Microwave Amplifiers
F1471NTGI	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	18 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	13 dB	-40 Cel	TIN		e3	400 MHz	4200 MHz
F1490NLGA	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	22 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33 dB	-40 Cel	TIN		e3	1800 MHz	6400 MHz
UPG2137T5A-E1	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	2					2.7,3.2	SOLCC16,.1,16		RF/Microwave Amplifiers	90 Cel		-30 Cel
F0111NBTI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16.5 dB	-40 Cel	TIN		e3	2200 MHz	4200 MHz
UPG2315T5T-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			150 mA		3.3	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-45 Cel
F0110NBTI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1500 MHz	2300 MHz
PF08109B	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	16	CERAMIC		2					3.5	LCC16(UNSPEC)		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
F0109NBTI	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	20 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	TIN	LOW NOISE	e3	650 MHz	1000 MHz
UPG105B-1	Renesas Electronics		SURFACE MOUNT	16	CERAMIC	GAAS						+-5	QFL16,.25SQ		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
F1471NTGI8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	18 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	13 dB	-40 Cel	TIN		e3	400 MHz	4200 MHz
MMA-054025	Littelfuse		SURFACE MOUNT	16	PLASTIC/EPOXY		1			350 mA		7.5	LCC16,.12SQ,20		RF/Microwave Amplifiers

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.