16 RF & Microwave Amplifiers 331

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC372LP3TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1					5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC617LP3TR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			115 mA		3/5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC415LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.67		COMPONENT	3	LCC16,.12SQ,20			85 Cel	16 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4900 MHz	5900 MHz
HMC5805LS6	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS		1	17 dBm	7		COMPONENT	10	LCC16,.24SQ,40/32	50 ohm		85 Cel	13.5 dB	-40 Cel					40000 MHz
HMC617LP3ERTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			115 mA		3/5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC669LP3RTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			105 mA		3/5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC561LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	21000 MHz
HMC372LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	700 MHz	1000 MHz
HMC413QS16G	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.6/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	1600 MHz	2200 MHz
HMC441LP3ERTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			115 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
ADL5570ACPZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1		10		COMPONENT	3.5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel	Matte Tin (Sn)		e3	2300 MHz	2400 MHz
HMC356LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	350 MHz	550 MHz
STB7720L	STMicroelectronics		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1					3.3	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-30 Cel
BLM7G1822S-40PBGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
SA5219D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BLM6G22-30	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
CGY2105ATS	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		2			144 mA	COMPONENT	+-5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	14.6 dB	-40 Cel		LOW NOISE		1710 MHz	1910 MHz
MRFIC1819R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	1900 MHz
CGY2030M	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			5 dBm			COMPONENT	3.3	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
MRFIC0919R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
BLM7G1822S-40PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	FL16(UNSPEC)		RF/Microwave Amplifiers
BLM7G1822S-40ABGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
BLM6G22-30G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
UAA3592HN	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	0 dBm		50 mA	COMPONENT	2.7,3.6	LCC16,.16SQ,25		RF/Microwave Amplifiers	70 Cel		-30 Cel				1920 MHz	1980 MHz
BLM7G1822S-40ABY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
SA5209D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
SA5219D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
MMG1001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
SA5219N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	700 MHz
SA2411DH	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1				COMPONENT	3	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	2400 MHz	2500 MHz
BLM7G22S-60PBG,118	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
BLM7G24S-30BGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
MMG1001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
SA5209N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	850 MHz
BLM7G1822S-20PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
CGY2032BTS	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm		800 mA	COMPONENT	3.2	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				1880 MHz	1900 MHz
BLM7G22S-60PB,118	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
SA5209D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
MMG1001R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY280	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			2	10 dBm	3		COMPONENT	3.6	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33.8 dB	-40 Cel				2300 MHz	5000 MHz
MHVIC2115R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3	204 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	31 dB					1600 MHz	2600 MHz
MHVIC915R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MMG2001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MMG2001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MHVIC915NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MHVIC2115NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		31 dB					1600 MHz	2600 MHz
MHV5IC1810NR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	26.5 dB			IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ		1805 MHz	1990 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.