17 RF & Microwave Amplifiers 18

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

935373852528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

28 dBm

10

COMPONENT

28

50 ohm

150 Cel

26.5 dB

-40 Cel

Tin (Sn)

e3

3200 MHz

4000 MHz

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

TIN

e3

1400 MHz

2200 MHz

A3I35D012WNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

2

26 dBm

COMPONENT

28

FLNG,.72"H.SPACE

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

TIN

e3

3400 MHz

3800 MHz

A3I35D012WGNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

2

26 dBm

COMPONENT

28

FLNG,.72"H.SPACE

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

TIN

e3

3400 MHz

3800 MHz

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

TIN

e3

2400 MHz

3100 MHz

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

28 dBm

10

COMPONENT

28

50 ohm

150 Cel

26.5 dB

-40 Cel

TIN

e3

3200 MHz

4000 MHz

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

28 dBm

10

COMPONENT

28

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

TIN

e3

2400 MHz

3100 MHz

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

TIN

e3

1400 MHz

2200 MHz

935343962528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

3100 MHz

935316286528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

Tin (Sn)

e3

1400 MHz

2200 MHz

935322497528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

Tin (Sn)

e3

3400 MHz

3800 MHz

935316291528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

Tin (Sn)

e3

1400 MHz

2200 MHz

935343961528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

3100 MHz

935323877528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

Tin (Sn)

e3

3400 MHz

3800 MHz

935373851528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

28 dBm

10

COMPONENT

28

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.