NXP Semiconductors - A2I35H060NR1

A2I35H060NR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A2I35H060NR1
Description NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;
Datasheet A2I35H060NR1 Datasheet
In Stock4,813
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 3400 MHz
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
No. of Terminals: 17
Maximum Input Power (CW): 26 dBm
Technology: LDMOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 3800 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 23 dB
Power Supplies (V): 28
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,813 $29.750 $143,186.750

Popular Products

Category Top Products