Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
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|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
|||||||
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
950 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
3300 MHz |
3800 MHz |
|||||||
|
Analog Devices |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
1.5 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
30.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
900 MHz |
1600 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
20000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
400 MHz |
3000 MHz |
||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
0 dBm |
75 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
20000 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
1.5,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
9.5 dB |
-40 Cel |
0 MHz |
20000 MHz |
|||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
27 dBm |
7 |
440 mA |
COMPONENT |
3.5,10 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
0 MHz |
22000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
5 dBm |
88 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
9000 MHz |
18000 MHz |
||||||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
325 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10.5 dBm |
225 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
30 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
10000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
5/8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
|||||||||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
18 dB |
-55 Cel |
6000 MHz |
9500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
8 dBm |
1.58 |
262 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
25.5 dB |
-40 Cel |
700 MHz |
2700 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
25 dBm |
7 |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
7500 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
24 dBm |
COMPONENT |
6 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
24 dB |
-55 Cel |
MATTE TIN |
e3 |
12500 MHz |
15500 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
9000 MHz |
12000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
5/7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
11.5 dBm |
100 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
85 Cel |
5 dB |
-40 Cel |
500 MHz |
6000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
10 MHz |
1100 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
6 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
17.5 dBm |
1.67 |
175 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
CMOS COMPATIBLE |
500 MHz |
4000 MHz |
|||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
6000 MHz |
9500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
1.5,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
9.5 dB |
-40 Cel |
0 MHz |
20000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
10 MHz |
1100 MHz |
||||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
CERAMIC |
BIPOLAR |
1 |
95 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5.5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
80 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
5/7 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
0 MHz |
10000 MHz |
|||||||||
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
5 dB |
-40 Cel |
400 MHz |
3000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
25 dBm |
7 |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
7500 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
2000 MHz |
20000 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
2000 MHz |
20000 MHz |
||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
7 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
|||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
9000 MHz |
12000 MHz |
|||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
400 MHz |
3000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
5 dB |
-40 Cel |
400 MHz |
3000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
9.5 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
10000 MHz |
|||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
30 dBm |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
2700 MHz |
3800 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.