Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
30 dBm |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
2700 MHz |
3800 MHz |
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Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
TIN LEAD |
e0 |
6000 MHz |
9500 MHz |
||||||||
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
325 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
9000 MHz |
12000 MHz |
||||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
3/8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
Matte Tin (Sn) - annealed |
e3 |
6000 MHz |
9500 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
84 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
|||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
9.5 dB |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
10000 MHz |
||||||||
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
7 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
6000 MHz |
9500 MHz |
|||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
2 |
12 dBm |
6 |
COMPONENT |
3.6 |
TQFP32,.28SQ |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
Tin/Lead (Sn/Pb) |
IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ |
e0 |
880 MHz |
915 MHz |
|||||||
|
NXP Semiconductors |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
300 mA |
24 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
2 |
COMPONENT |
3.6 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
3.3/5 |
QFP32,.35SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-40 Cel |
2400 MHz |
2500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.