32 RF & Microwave Amplifiers 111

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC1114LP5DE

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAN

1

30 dBm

150 mA

COMPONENT

28

LCC32,.2SQ,20

50 ohm

85 Cel

29 dB

-40 Cel

2700 MHz

3800 MHz

HMC591LP5

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

7

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

15 dB

-40 Cel

TIN LEAD

e0

6000 MHz

9500 MHz

HMC640LP5TR

Analog Devices

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

325 mA

5

LCC32,.2SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC487LP5

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

7

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

19 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

9000 MHz

12000 MHz

HMC659LC5RTR

Analog Devices

SURFACE MOUNT

32

PLASTIC/EPOXY

1

3/8

LCC32,.2SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC590LP5E

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

12 dBm

COMPONENT

7

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-55 Cel

Matte Tin (Sn) - annealed

e3

6000 MHz

9500 MHz

HMC464LP5TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

3,8

LCC32,.2SQ,20

50 ohm

85 Cel

8 dB

-40 Cel

2000 MHz

20000 MHz

HMC462LP5TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

84 mA

5

LCC32,.2SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN LEAD

e0

HMC619LP5

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

27 dBm

COMPONENT

12

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

150 Cel

9.5 dB

-55 Cel

Tin/Lead (Sn/Pb)

e0

0 MHz

10000 MHz

HMC591LP5TR

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

7

LCC32,.2SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC591LP5E

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

7

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

15 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

6000 MHz

9500 MHz

MRFIC1859R2

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

2

12 dBm

6

COMPONENT

3.6

TQFP32,.28SQ

50 ohm

RF/Microwave Amplifiers

100 Cel

-35 Cel

Tin/Lead (Sn/Pb)

IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ

e0

880 MHz

915 MHz

UGY1088,118

NXP Semiconductors

SURFACE MOUNT

32

PLASTIC/EPOXY

1

300 mA

24

LCC32,.2SQ,20

RF/Microwave Amplifiers

MRFIC1869

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

2

COMPONENT

3.6

LCC32,.2SQ,20

RF/Microwave Amplifiers

100 Cel

-35 Cel

SA2410

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

COMPONENT

3.3/5

QFP32,.35SQ,32

50 ohm

RF/Microwave Amplifiers

85 Cel

29 dB

-40 Cel

2400 MHz

2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.