32 RF & Microwave Amplifiers 111

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC907APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC907APM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC994ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1			300 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm			11 dB		Matte Tin (Sn)		e3		28000 MHz
HMC462LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			84 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
HMC460LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	18 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	GOLD OVER NICKEL		e4	0 MHz	20000 MHz
HMC462LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	2000 MHz	20000 MHz
HMC516LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1			88 mA		3	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
HMC1114PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
HMC659LC5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	3/8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD OVER NICKEL		e4	0 MHz	15000 MHz
HMC516LC5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	5 dBm		88 mA	COMPONENT	3	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	GOLD OVER NICKEL		e4	9000 MHz	18000 MHz
HMC463LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	18 dBm		80 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel				2000 MHz	20000 MHz
HMC565LC5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	10 dBm		75 mA	COMPONENT	3	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	GOLD OVER NICKEL		e4	6000 MHz	20000 MHz
HMC565LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	10 dBm		75 mA	COMPONENT	3	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	GOLD NICKEL		e4	6000 MHz	20000 MHz
HMC460LC5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	18 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	GOLD OVER NICKEL		e4	0 MHz	20000 MHz
HMC606LC5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	15 dBm		95 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	GOLD OVER NICKEL		e4	2000 MHz	18000 MHz
HMC606LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	15 dBm		95 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel				2000 MHz	18000 MHz
MAAP-011316-TR0500	M/a-com Technology Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1	15 dBm	1.43		COMPONENT	6	LCC32,.2SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				27500 MHz	31000 MHz
MAAP-011317-TR0500	M/a-com Technology Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1	18 dBm	1.67		COMPONENT	6	LCC32,.2SQ,20	50 ohm		85 Cel	23 dB	-40 Cel				27500 MHz	31000 MHz
HMC463LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	2000 MHz	20000 MHz
HMC465LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	20000 MHz
RDA1005L	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1				COMPONENT	5	LCC32,.2SQ,20		RF/Microwave Amplifiers		17.5 dB					50 MHz	4000 MHz
RDA1005LSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC465LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	20000 MHz
HMC797LP5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			440 mA		10	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-55 Cel
HMC797LP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	23 dBm	7	440 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-55 Cel	Matte Tin (Sn)		e3	0 MHz	22000 MHz
HMC907LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	20 dBm		400 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	Matte Tin (Sn)		e3	200 MHz	22000 MHz
HMC907LP5ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			400 mA		10	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-55 Cel
HMC659LC5TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	3/8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	0 MHz	15000 MHz
HMC490LP5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	12000 MHz	16000 MHz
HMC490LP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	12000 MHz	16000 MHz
HMC490LP5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel				12000 MHz	16000 MHz
HMC490LP5TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC462LP5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	2000 MHz	20000 MHz
RDA1005LTR13	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
RDA1005LTR7	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
HMC465LP5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					8	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC464LP5E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	MATTE TIN		e3	2000 MHz	20000 MHz
TRF1123IRTMT	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm		700 mA	COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2100 MHz	2700 MHz
TRF1223IRTMRG3	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm		950 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	3300 MHz	3800 MHz
TRF1223IRTMT	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm		950 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	3300 MHz	3800 MHz
TRF1223IRTMTG3	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm		950 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	3300 MHz	3800 MHz
TRF1123IRTMRG3	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm		700 mA	COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2100 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.