Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
54 mA |
COMPONENT |
5 |
SOT-143R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
54 mA |
COMPONENT |
5 |
SOT-143R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.4 dB |
-40 Cel |
50 MHz |
4000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
54 mA |
COMPONENT |
5 |
SOT-143R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
4000 MHz |
||||||
TE Connectivity |
4 |
METAL |
1 |
16 mA |
15 |
CAN4,.3 |
RF/Microwave Amplifiers |
50 Cel |
0 Cel |
||||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20.4 dB |
-40 Cel |
MATTE TIN |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-25 Cel |
Tin (Sn) |
e3 |
50 MHz |
1300 MHz |
|||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
50 MHz |
1300 MHz |
|||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2.5 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
12000 MHz |
||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
20 mA |
COMPONENT |
3.5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
800 MHz |
|||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.3 |
65 mA |
COMPONENT |
4.2 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.3 |
65 mA |
COMPONENT |
4.2 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
e2 |
0 MHz |
4000 MHz |
||||||
Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-25 Cel |
0 MHz |
1800 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
1.8/3.3 |
BGA4,2X2,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.1 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
e2 |
||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.3 dB |
-40 Cel |
HIGH RELIABILITY |
0 MHz |
6000 MHz |
||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.5 |
LCC4(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.5 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
8000 MHz |
||||||
|
Skyworks Solutions |
NARROW BAND LOW POWER |
SURFACE MOUNT |
4 |
BICMOS |
1 |
0 dBm |
1.5 |
5 mA |
COMPONENT |
1.8/2.8 |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
1559 MHz |
1606 MHz |
||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
1.9 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-45 Cel |
0 MHz |
8000 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
50 MHz |
1300 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
50 MHz |
1300 MHz |
||||||
|
TE Connectivity |
4 |
METAL |
1 |
38 mA |
15 |
CAN4,.3 |
RF/Microwave Amplifiers |
50 Cel |
0 Cel |
|||||||||||||||||
Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-25 Cel |
0 MHz |
1800 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
20 mA |
COMPONENT |
3.5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
800 MHz |
||||||
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
1.25 |
COMPONENT |
3 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
800 MHz |
1000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
1.25 |
11 mA |
COMPONENT |
3 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
800 MHz |
1000 MHz |
|||||
Agilent Technologies |
SURFACE MOUNT |
4 |
METAL |
GAAS |
22 mA |
5 |
SL,4LEAD,.07SQ |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
Mitsubishi Electric |
NARROW BAND HIGH POWER |
THROUGH HOLE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
14.77 dBm |
4 |
MODULE |
12.5 |
MODULE,4LEAD,.74 |
50 ohm |
90 Cel |
25.22 dB |
-30 Cel |
400 MHz |
470 MHz |
|||||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.5 |
35 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
3000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.4 |
35 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.4 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
3000 MHz |
|||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
1.9 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-45 Cel |
0 MHz |
8000 MHz |
||||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
13 dBm |
1.7 |
35 mA |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-20 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
0 MHz |
2000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2 |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
0 MHz |
12000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2 |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
0 MHz |
12000 MHz |
||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.2 |
60 mA |
COMPONENT |
4 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier |
e2 |
0 MHz |
1500 MHz |
||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.2 |
60 mA |
COMPONENT |
4 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
1500 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
LOW NOISE |
0 MHz |
1800 MHz |
|||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.6 |
COMPONENT |
3.6 |
MODULE,4LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.3 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
8000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
|||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
1.8 |
COMPONENT |
3.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
0 MHz |
1000 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
1.8 |
COMPONENT |
3.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier |
LOW NOISE |
e2 |
0 MHz |
1000 MHz |
|||||
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
0 MHz |
1100 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
0 MHz |
1100 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.6 |
40 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.9 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
6000 MHz |
|||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.7 |
40 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
6000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
GAAS |
1 |
13 dBm |
2.5 |
22 mA |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
e3 |
1500 MHz |
8000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.