4 RF & Microwave Amplifiers 317

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY241	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID	1	10 dBm	3		COMPONENT	3.5	MODULE,4LEAD,.67	50 ohm	RF/Microwave Amplifiers	100 Cel	35.2 dB	-30 Cel				880 MHz	915 MHz
MRFIC0916T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm		5.6 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
BGY119C	NXP Semiconductors		SURFACE MOUNT	4	CERAMIC	HYBRID						4.8	SMSIP4,4GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
BGY148A	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	440 MHz
CGY31	Infineon Technologies			4	METAL	GAAS				200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
CGY41S	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY50	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS		16 dBm		80 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	7.5 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	100 MHz	3000 MHz
CGY41ES	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
BGA312	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2000 MHz
BGA310	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	8 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2400 MHz
CGY21	Infineon Technologies			4	METAL	BIPOLAR				200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
CGY41H	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
BGA416	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	8 dBm			COMPONENT	3	SOT-143R	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-65 Cel				900 MHz	1800 MHz
CGY41P	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
BGA318	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	12 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	1200 MHz
CGY40	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS			2	80 mA	COMPONENT	4.5	SL,4LEAD,.07SQ		RF/Microwave Amplifiers	80 Cel		-40 Cel				100 MHz	1800 MHz
MAX2695EWS+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	10.9 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2632EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
MAX2689EWS+T10	Maxim Integrated		SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1					1.8/3.3	BGA4,2X2,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2650EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.3	24 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2630EUS	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2687EWS+T10	Maxim Integrated		SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1					1.8/3.3	BGA4,2X2,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
TA4001F(TE85L)	Toshiba		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4020FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		7 mA	COMPONENT	3	SOT-143R		RF/Microwave Amplifiers	85 Cel	8.5 dB	-40 Cel				1500 MHz	2600 MHz
TA4002F(TE85L)	Toshiba		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				20 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPC1688G-T1	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC1659A	Renesas Electronics			4	METAL	BIPOLAR				27 mA		10	CAN4,.1		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
UPG110B	Renesas Electronics		SURFACE MOUNT	4	CERAMIC	GAAS				180 mA		8	SL,4LEAD,.18SQ		RF/Microwave Amplifiers
PF0067A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4,4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPC1688G-T2	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PF1010A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						6	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers
UPC1659B	Renesas Electronics		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				27 mA		10	SL,4LEAD,.18SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
PF0025	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						6	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPG103A	Renesas Electronics			4	METAL	GAAS				80 mA		5	CAN4,.1		RF/Microwave Amplifiers	125 Cel		-65 Cel	Tin/Lead (Sn/Pb)		e0
PF0045A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4,4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers
UPC1675G	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				22 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC1653A	Renesas Electronics			4	METAL	BIPOLAR				25 mA		10	CAN4,.1		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
UPC1688G	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PF0047A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4,4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
PF0065A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4,4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
PF0147	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID						4.8	SMSIP4,5GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPG110B-L	Renesas Electronics		SURFACE MOUNT	4	CERAMIC	GAAS				180 mA		8	SL,4LEAD,.18SQ		RF/Microwave Amplifiers
UPC1654A	Renesas Electronics			4	METAL	BIPOLAR				48 mA		10	CAN4,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
UPC1676G	Renesas Electronics		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
UPC1651G	Renesas Electronics		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				25 mA		5	SL,4GW-LD,.145CIR		RF/Microwave Amplifiers	70 Cel		-20 Cel
MSA-0870	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	BIPOLAR		13 dBm	1.9	40 mA	COMPONENT	7.8	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		22 dB		Gold (Au)		e4	100 MHz	4000 MHz
MSA-0505-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	25 dBm	2	100 mA	COMPONENT	8.4	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		6 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1500 MHz
MSA-0436-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	BIPOLAR	1	13 dBm	1.9	70 mA	COMPONENT	5.25	SL,4LEAD,.1"SQ	50 ohm	RF/Microwave Amplifiers		7.5 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	3800 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.