4 RF & Microwave Amplifiers 317

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MGA-86576-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS		13 dBm	2.5	22 mA	COMPONENT	5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		20 dB					1500 MHz	8000 MHz
MSA-3111-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	500 MHz
MSA-3111-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-3111-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.2	40 mA	COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	23.5 dB	-25 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	500 MHz
MSA-3111-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-3111-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-1105-STR	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	1300 MHz
NBB-400-SR	Qorvo		SURFACE MOUNT	4	CERAMIC	BIPOLAR	1					3.9	SL,4LEAD,.07SQ		RF/Microwave Amplifiers	85 Cel		-45 Cel
QPA2225D	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	4		GAN	1	18 dBm	3		COMPONENT	20	DIE OR CHIP	50 ohm			23 dB					28000 MHz	38000 MHz
SGA-6286Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel				0 MHz	5500 MHz
SGA2486Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		23 mA	COMPONENT	2.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	17.8 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA6286Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5500 MHz
MSA-0886-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.9	40 mA	COMPONENT	7.8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		20.5 dB		Matte Tin (Sn)		e3	0 MHz	1000 MHz
TGA8021SPCX	Texas Instruments	WIDE BAND LOW POWER		4		GAAS			1.3		COMPONENT	3	MODULE,4LEAD,.45		RF/Microwave Amplifiers	150 Cel				LOW NOISE		9000 MHz	10000 MHz
ADH8410-000C	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4			1	20 dBm		70 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-40 Cel				10 MHz	10000 MHz
HMC-C582	Analog Devices	WIDE BAND LOW POWER		4		PHEMT	1	23 dBm		900 mA	COMPONENT	15	MODULE,4LEAD(UNSPEC)	50 ohm		75 Cel	16 dB	-40 Cel				10 MHz	20000 MHz
PPA4213	Analog Devices		SURFACE MOUNT	4	METAL	GAAS						8	QFL4,.4SQ		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
PPA18222	Analog Devices		SURFACE MOUNT	4	METAL	GAAS						9	QFL4,.25SQ		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
HMC-C050	Analog Devices	WIDE BAND MEDIUM POWER		4		GAAS	1	15 dBm		104 mA	COAXIAL	5	MODULE(UNSPEC)	50 ohm		85 Cel	9.5 dB	-55 Cel	Gold (Au) - with Nickel (Ni) barrier	SMA-F	e4	2000 MHz	18000 MHz
HMC481MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		85 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	5000 MHz
HMC476MP86ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
HMC476MP86	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	TIN LEAD		e0	0 MHz	6000 MHz
HMC479MP86TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			100 mA		8	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC479MP86ETR	Analog Devices		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	17 dBm		100 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	7.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	5000 MHz
HMC476MP86TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1					5	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC481MP86	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		85 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	TIN LEAD		e0	0 MHz	5000 MHz
HMC474MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	7 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
HMC451-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	4		GAAS	1	10 dBm	1.38	150 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	15 dB	-55 Cel				5000 MHz	20000 MHz
HMC479MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	17 dBm		100 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	7.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	5000 MHz
HMC481MP86ETR	Analog Devices		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			85 mA		8	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
HMC474MP86	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	7 dB	-40 Cel	TIN LEAD		e0	0 MHz	6000 MHz
HMC479MP86	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	17 dBm		100 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	7.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	5000 MHz
HMC481MP86TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			85 mA		8	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2650EUS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.3	24 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MAX2679BENS+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	16.5 dB	-40 Cel
MAX2679BENS+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	16.5 dB	-40 Cel
MAX2679ENS+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	19 dB	-40 Cel
MAX2692EWS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2630EUS+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MAX2679ENS+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	19 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
LA8175M	Onsemi		SURFACE MOUNT	4	PLASTIC/EPOXY		1					5	FL4,.06		RF/Microwave Amplifiers	70 Cel		-20 Cel
BGY240S	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID	1	7 dBm	3			3.5	MODULE,4LEAD,.51	50 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-30 Cel				890 MHz	915 MHz
MRFIC0915T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm		2.5 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
BGY118C	NXP Semiconductors		SURFACE MOUNT	4	CERAMIC	HYBRID						4.8	SMSIP4,4GNDFLNG		RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
BGY120B	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				872 MHz	905 MHz
BGY148B	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				430 MHz	488 MHz
BGY205	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	CERAMIC	HYBRID		8.5 dBm	2		MODULE	6	SMSIP4,4GNDFLNG	50 ohm	RF/Microwave Amplifiers	100 Cel	32.5 dB	-30 Cel				880 MHz	915 MHz
BGY120A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				824 MHz	849 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.