5 RF & Microwave Amplifiers 40

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC-AUH312	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	5		GAAS	1	10 dBm		65 mA	COMPONENT	8	DIE OR CHIP	50 ohm		85 Cel	10 dB	-55 Cel				500 MHz	80000 MHz
SPM0101	Onsemi		SURFACE MOUNT	5		GAAS				50 mA		3	TSOP5/6,.11,37		RF/Microwave Amplifiers
CGY59	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					COMPONENT	3/5	TSOP5/6,.11,37		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	2500 MHz
CGY60	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				9 mA	COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		17 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	200 MHz	2500 MHz
CGY98	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS			2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
CGY63	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		15 dBm	2		COMPONENT	3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY62	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				175 mA	COMPONENT	3/4.5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		18 dB		Tin/Lead (Sn/Pb)		e0	200 MHz	2500 MHz
CGY120	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY195	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		20 dBm	2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		24 dB					800 MHz	3000 MHz
MAX2631EUK-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2631EUK	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	1000 MHz
MAX2632EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	1000 MHz
MAX2631EUK+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz
MAX2631EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz
TA4004F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
S-AU80	Toshiba	NARROW BAND HIGH POWER		5	PLASTIC/EPOXY	HYBRID						3.6	MODULE,5LEAD,.53		RF/Microwave Amplifiers
TA4012F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				8.5 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4011F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4003F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
S-AU76	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	CERAMIC	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
S-AU55	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		12 dBm	3	390 mA	COMPONENT	5.5,5.8	SMSIP5/6H,.5	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
TA4004F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel				700 MHz
TA4003F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
S-AU77	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0	872 MHz	905 MHz
TA4000F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				15 mA		5	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
TA4013F	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				14 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
MC-5950	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				370 mA		5.8,-5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-5952	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				370 mA		5.8,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-5963	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				460 mA		4.6,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
HA22033	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				2.5 mA		2.7	TSOP5/6,.11,37		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
MC-5973	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				450 mA		4.6,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-7600	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				700 mA		5.8,-2.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-5974	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				450 mA		4.6,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
PF0140	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	HYBRID						6	SMSIP5,6GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-5951	Renesas Electronics		SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				370 mA		5.8,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC-5964	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				460 mA		4.6,-3.3	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
MC5108B	Renesas Electronics			5	PLASTIC/EPOXY	HYBRID	1			240 mA		24	MODULE,5LEAD(UNSPEC)		RF/Microwave Amplifiers	90 Cel		-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.