Infineon Technologies - CGY60

  1. Home
  2. Infineon Technologies - CGY60
CGY60 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number CGY60
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
Datasheet CGY60 Datasheet
In Stock362
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 200 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 9 mA
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Mounting Feature: SURFACE MOUNT
No. of Terminals: 5
Package Equivalence Code: TSOP5/6,.11,37
Technology: GAAS
Characteristic Impedance: 50 ohm
Additional Features: LOW NOISE
Maximum Operating Frequency: 2500 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 17 dB
Power Supplies (V): 3/5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
362 - -

Popular Products

Category Top Products

HMC-ALH140 by Analog Devices

HMC-ALH140

Analog Devices

Analog Devices' HMC-ALH140 is a GAAS wide band low power RF amplifier with 10 dB gain, operating from 24-40 GHz. It has a max input power of 6 dBm, operates on 4V supply, and draws up to 100 mA current. Ideal for RF & microwave applications requiring high frequency amplification in extreme temperature conditions.
NBB-310 by Rf Micro Devices

NBB-310

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;
CMPA5585030F by Wolfspeed

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER;
SBB5089ZSR by Rf Micro Devices

SBB5089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC608LC4 by Analog Devices

HMC608LC4

Analog Devices

HMC608LC4 by Analog Devices is a wide band medium power RF amplifier with 27 dB gain. It operates b/w 9500-11500 MHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.
HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC1040LP3CETR by Hittite Microwave

HMC1040LP3CETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;
ZX60-P103LN+ by Mini-circuits

ZX60-P103LN+

Mini-circuits

Mini-circuits' ZX60-P103LN+ is a COAXIAL RF amplifier with 4.5 dB Gain, 50-3000 MHz frequency range, and 21 dBm CW power input. Ideal for wideband low-power applications, it offers a VSWR of 1.8 and operates b/w -40°C to 85°C temperature range.
NBB-400-D by Rf Micro Devices

NBB-400-D

Rf Micro Devices

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.9;
MGA-81563-TR2G by Agilent Technologies

MGA-81563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;
XP1050-QJ-0G0T by M/a-com Technology Solutions

XP1050-QJ-0G0T

M/a-com Technology Solutions

XP1050-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain. It operates b/w 7-9 GHz, handles up to 25 dBm CW input power, and can withstand temperatures from -40 to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
MGA-62563-BLKG by Broadcom

MGA-62563-BLKG

Broadcom

Broadcom's MGA-62563-BLKG is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, matte tin terminals, and requires 3-5V power supply at 77 mA.
HMC-AUH312 by Analog Devices

HMC-AUH312

Analog Devices

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
MGA-86563-TR1G by Agilent Technologies

MGA-86563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
AG303-86G by Qorvo

AG303-86G

Qorvo

The Qorvo AG303-86G is a wide band low power RF amplifier with 20.4 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF applications requiring high gain in the -40°C to 85°C temperature range.
HMC414MS8GE by Analog Devices

HMC414MS8GE

Analog Devices

Analog Devices' HMC414MS8GE is a narrow band medium power RF amplifier with 17 dB gain, operating from 2200 to 2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
HMC441LP3ETR by Analog Devices

HMC441LP3ETR

Analog Devices

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.