Toshiba - S-AU55

  1. Home
  2. Toshiba - S-AU55
S-AU55 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AU55
Description NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 12 dBm;
Datasheet S-AU55 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 824 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 390 mA
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -30 Cel
Mounting Feature: SURFACE MOUNT
Maximum Voltage Standing Wave Ratio: 3
No. of Terminals: 5
Maximum Input Power (CW): 12 dBm
Package Equivalence Code: SMSIP5/6H,.5
Technology: GAAS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 849 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Power Supplies (V): 5.5,5.8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

RF3827TR7 by Qorvo

RF3827TR7

Qorvo

Qorvo's RF3827TR7 is a GAAS wide band medium power amplifier with 20.5 dB gain, operating from 5 MHz to 1500 MHz. It has a max input power of 13 dBm and VSWR of 20, suitable for surface mount applications in RF & microwave systems requiring up to 8V supply voltage.
HMC505LP4E by Hittite Microwave

HMC505LP4E

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
MGA-81563-TR1 by Broadcom

MGA-81563-TR1

Broadcom

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.
SKY65404-31 by Skyworks Solutions

SKY65404-31

Skyworks Solutions

SKY65404-31 by Skyworks Solutions is a wide band low power RF amplifier with 11 dB gain, operating from 4900 MHz to 5900 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
HMC6981LS6 by Hittite Microwave

HMC6981LS6

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;
MGA-62563-BLK by Agilent Technologies

MGA-62563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
BGU6102,147 by NXP Semiconductors

BGU6102,147

NXP Semiconductors

NXP Semiconductors' BGU6102,147 is a wide band low power RF amplifier with 6 terminals and operates on 3V supply. With a max operating temperature of 85°C, it is ideal for surface mount applications in RF and microwave systems.
ADL8142ACPZN-R7-CSL by Analog Devices

ADL8142ACPZN-R7-CSL

Analog Devices

WIDE BAND LOW POWER;
ADA-4643-BLKG by Broadcom

ADA-4643-BLKG

Broadcom

ADA-4643-BLKG by Broadcom is a wide band low power RF amplifier with 15.5 dB gain, operating from 0-2500 MHz. It features a max input power of 18 dBm and VSWR of 1.6, suitable for RF & microwave applications requiring high performance in plastic/epoxy package.
HMC549MS8G by Analog Devices

HMC549MS8G

Analog Devices

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.
TGA2578-CP by Qorvo

TGA2578-CP

Qorvo

TGA2578-CP by Qorvo is a GAN technology RF amplifier with 26 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. This module features -2.8V/28V power supplies, surface mounting, and requires 400mA supply current.
TQP3M9037 by Qorvo

TQP3M9037

Qorvo

TQP3M9037 by Qorvo is a wide band medium power RF amplifier with 18.5 dB gain, operating from 700 MHz to 6000 MHz. It has a max input power of 22 dBm and operates at temperatures ranging from -40°C to 105°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC-AUH312 by Hittite Microwave

HMC-AUH312

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 65000 MHz; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 500 MHz; Minimum Operating Temperature: 0 Cel;
HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
HMC516 by Hittite Microwave

HMC516

Hittite Microwave

WIDE BAND LOW POWER; Technology: GAAS; Maximum Input Power (CW): 5 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Terminal Finish: Gold (Au);
HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.
MAAM-011109-TR1000 by M/a-com Technology Solutions

MAAM-011109-TR1000

M/a-com Technology Solutions

MAAM-011109-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 8 dB gain, operating from 10 MHz to 40 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -40°C to +85°C. Ideal for RF and microwave applications requiring high performance in a compact form factor.
QPA2735TR7X by Qorvo

QPA2735TR7X

Qorvo

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.