8 RF & Microwave Amplifiers 329

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC287MS8	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	7 dBm		15 mA	COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	2300 MHz	2500 MHz
HMC326MS8G	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	TIN LEAD		e0	3000 MHz	4500 MHz
HMC406MS8GTR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
ADL5322ACPZ-R7	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18.3 dB	-40 Cel	Matte Tin (Sn)	TAPE AND REEL	e3	700 MHz	1000 MHz
HMC754S8GETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	2			175 mA		5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC471MS8GTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	2					8	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC549MS8GETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
ADL5323ACPZ-R7	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn)	TAPE AND REEL	e3	1700 MHz	2400 MHz
HMC442LM1TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	16 dBm			COMPONENT	5	LCC8,.2SQ,40	50 ohm		85 Cel	10.5 dB	-40 Cel				17500 MHz	24000 MHz
HMC407MS8GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	20 dBm			COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	MATTE TIN		e3	5000 MHz	7000 MHz
HMC471MS8GE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	2	14 dBm			COMPONENT	8	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	MATTE TIN		e3	0 MHz	5000 MHz
ADL5723ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	24.1 dB	-40 Cel				10100 MHz	11700 MHz
AD8354ACP-R2	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		34 mA	COMPONENT	3/5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	1 MHz	2700 MHz
HMC287MS8E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	7 dBm		15 mA	COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	2300 MHz	2500 MHz
HMC326MS8GERTR	Analog Devices		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
ADL5721ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	24.6 dB	-40 Cel				5900 MHz	8500 MHz
HMC441LM1TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC8,.2SQ,40	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel				7000 MHz	15500 MHz
ADL5322ACPZ-R2	Analog Devices		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	SOLCC8,.11,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn)		e3
HMC465E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		GAAS	1	23 dBm			COMPONENT	1.5,8	DIE OR CHIP	50 ohm		85 Cel	13 dB	-55 Cel				0 MHz	20000 MHz
AD8354ACP-REEL7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		34 mA	COMPONENT	3/5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	1 MHz	2700 MHz
ADL5323ACPZ-R2	Analog Devices		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					5	SOLCC8,.11,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn)		e3
ADL5724ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1			90.3 mA	COMPONENT	1.8,3.3	SOLCC8,.08,20	50 ohm		85 Cel	23.7 dB	-40 Cel				12700 MHz	15400 MHz
ADL5725ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1				COMPONENT	1.8,3.3	SOLCC8,.08,20	50 ohm		85 Cel	25.1 dB	-40 Cel				17700 MHz	19700 MHz
HMC469MS8GETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1					8	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
ADL5721ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	24.6 dB	-40 Cel				5900 MHz	8500 MHz
HMC320MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	5 dBm			COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	TIN LEAD		e0	5000 MHz	6000 MHz
ADL5521ACPZ-WP	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1			65 mA	COMPONENT	3/5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	400 MHz	4000 MHz
HMC320MS8GE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	5 dBm			COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	MATTE TIN		e3	5000 MHz	6000 MHz
HMC469MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	2	17 dBm			COMPONENT	8	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	7.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	5000 MHz
ADL5322ACPZ-WP	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18.3 dB	-40 Cel	Matte Tin (Sn)	WAFFLE PACK	e3	700 MHz	1000 MHz
HMC1022A	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8		GAAS	1		1.08		COMPONENT	10	DIE OR CHIP	50 ohm			9.5 dB					0 MHz	48000 MHz
HMC318MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	0 dBm		10 mA	COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	5000 MHz	6000 MHz
HMC326MS8GRTR	Analog Devices		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC441LM1RTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC8,.2SQ,40	50 ohm		85 Cel	11 dB	-40 Cel				7000 MHz	15500 MHz
HMC8401-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
MAX2614ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.67		COMPONENT	5		50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2613ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.43		COMPONENT	5		50 ohm		85 Cel	18.1 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2612ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.22		COMPONENT	5		50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
TSH690IDT	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
TSH691ID	STMicroelectronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR						2.7	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0
TSH690ID	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
STB7001	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1		1.5		COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers		0 dB			THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS		925 MHz	960 MHz
STB7002	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1		1.8	22.5 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers		0 dB			THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS		1805 MHz	1880 MHz
MRFIC0930DMR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		12 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers	70 Cel	17.5 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
MRFIC1501R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		7.5 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1000 MHz	2000 MHz
MRFIC1808	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		5.5 mA	COMPONENT	3	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2100 MHz
SA5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		20 dBm		8.4 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	1200 MHz
OM926	NXP Semiconductors		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	HYBRID						12	SIP8,.06		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.