8 RF & Microwave Amplifiers 329

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MRFIC0930R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		12 mA	COMPONENT	2.8	SOP8,.25		RF/Microwave Amplifiers	70 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
BGA7127,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			325 mA		5	SOLCC8,.12,20		RF/Microwave Amplifiers
SA5204AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	350 MHz
BGA7130,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			550 mA		5	SOLCC8,.12,20		RF/Microwave Amplifiers
BGS67A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGA7124,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			200 mA		3.3/5	SOLCC8,.12,20		RF/Microwave Amplifiers
SA5205AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				0 MHz	600 MHz
BGS67A,112	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
935298613115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
MC13852EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		6.5 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.4 dB	-30 Cel				400 MHz	1000 MHz
MML20211HT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	22 dBm		60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		15 dB		TIN		e3	1400 MHz	2800 MHz
MC13144D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					12 mA	COMPONENT	3	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0		2000 MHz
MC13851EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT		1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		TIN		e3	1000 MHz	4000 MHz
MML09231HT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			70 mA		5	SOLCC8,.08,20		RF/Microwave Amplifiers				Tin (Sn)		e3
MML09211HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		90 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		19 dB		Matte Tin (Sn)		e3	400 MHz	1400 MHz
MC13850EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		12.5 mA	COMPONENT	2.7	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				400 MHz	2500 MHz
MC13851EPR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
BGU8052	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel		-40 Cel				1500 MHz	2500 MHz
BGU8053	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
BGU8051	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
935318587147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT		1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		Tin (Sn)		e3	1000 MHz	4000 MHz
BGU8051,118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
BGU8053X	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
PTMA210452FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC			1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
PTMA210452FL	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC			1	25 dBm	10		MODULE	28	MODULE,8LEAD,.6	50 ohm	RF/Microwave Amplifiers		26.5 dB		Gold (Au)		e4	1900 MHz	2200 MHz
PTMA180402FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC			1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
CGY196	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			20 dBm	20		COMPONENT	3.3/5	TSOP8,.1,30/24	50 ohm	RF/Microwave Amplifiers		27 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	3500 MHz
CGY197	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			20 dBm	20		COMPONENT	2/6	SOP8(UNSPEC)	50 ohm	RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	800 MHz	35000 MHz
MAX2130EUA	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	15 dBm	2	104 mA	COMPONENT	5	TSSOP8,.19	75 ohm	RF/Microwave Amplifiers	85 Cel	7.1 dB	-40 Cel	TIN LEAD		e0	44 MHz	878 MHz
MAX2130EUA-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	15 dBm	2	104 mA	COMPONENT	5	TSSOP8,.19	75 ohm	RF/Microwave Amplifiers	85 Cel	7.1 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	44 MHz	878 MHz
MAX2653EUA	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1			8.5 mA	COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ	e0	1805 MHz	1880 MHz
MAX2653EUA-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1			8.5 mA	COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ	e0	1805 MHz	1880 MHz
TA4023F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1			36 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel
TG2006F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			10 dBm	20	150 mA	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel				1895 MHz	1918 MHz
TG2005F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1			180 mA		-1.3,3	TSSOP8,.16		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4022F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1			42 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
S9750	Toshiba	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			13 dBm		400 mA	COMPONENT	6	FL8,.32FL	50 ohm	RF/Microwave Amplifiers	80 Cel	19 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0
TG2006FTE12L	Toshiba		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS					150 mA		3	TSSOP8,.16		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
UPC1676B	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					24 mA		5	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	125 Cel		-55 Cel
UPG100A	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	GAAS					60 mA		+-5	QFL8,.15SQ		RF/Microwave Amplifiers	125 Cel		-65 Cel	Tin/Lead (Sn/Pb)		e0
UPC8230TU-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		8 mA	COMPONENT	3	FL8,.09,20		RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
UPG101B	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	GAAS			15 dBm		143 mA	COMPONENT	8,-5	QFL8,.15SQ	50 ohm	RF/Microwave Amplifiers	80 Cel	12 dB	-50 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	3000 MHz
UPC1678GV-E1	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			10 dBm		60 mA	COMPONENT	5	SSOP8,.2	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2000 MHz
UPC1678G-E2	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	4.42	60 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-45 Cel	Tin/Lead (Sn/Pb)		e0		2000 MHz
MC-7640-E1	Renesas Electronics	NARROW BAND LOW POWER		8	PLASTIC/EPOXY	GAAS					770 mA		-2.5,3.5	MODULE,8LEAD,.4		RF/Microwave Amplifiers
UPC1655C	Renesas Electronics	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					25 mA		5	DIP8,.3		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
UPC1654B	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					48 mA		10	SL,8LEAD,.15SQ		RF/Microwave Amplifiers	70 Cel		-20 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.