Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HYBRID |
4.8 |
SMDIP8,.3 |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
25 mA |
5 |
SOP8,.25 |
RF/Microwave Amplifiers |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
8 |
PLASTIC/EPOXY |
GAAS |
770 mA |
-2.5,3.5 |
MODULE,8LEAD,.4 |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
48 mA |
10 |
DIP8,.3 |
RF/Microwave Amplifiers |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
6 dBm |
230 mA |
COMPONENT |
3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
230 mA |
3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
|
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
38 mA |
COMPONENT |
5 |
SSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
1.5 dB |
-40 Cel |
30 MHz |
100 MHz |
|||||||||
Renesas Electronics |
8 |
METAL |
BIPOLAR |
18 mA |
10 |
CAN8,.2 |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
CERAMIC |
HYBRID |
13 dBm |
3 |
COMPONENT |
4.8 |
SOLCC8,.3 |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
1710 MHz |
1785 MHz |
||||||||||||
Renesas Electronics |
NARROW BAND HIGH POWER |
8 |
PLASTIC/EPOXY |
HYBRID |
4.8 |
MODULE,8LEAD,.54 |
RF/Microwave Amplifiers |
||||||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
4.42 |
60 mA |
COMPONENT |
5 |
SOP8,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-45 Cel |
2000 MHz |
|||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
49 mA |
5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
300 mA |
+-5 |
FL8,.2FL |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
2 |
10 dBm |
3 |
COMPONENT |
3.5 |
SOLCC8,.3,47 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ |
824 MHz |
849 MHz |
|||||||||
Renesas Electronics |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HYBRID |
4.8 |
SOLCC8,.3 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
Renesas Electronics |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
8 |
CERAMIC |
MOS |
2 |
10 dBm |
3.5 |
MODULE |
3.5 |
DILCC8,.46 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
1710-1785MHZ |
880 MHz |
915 MHz |
|||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
70 mA |
COMPONENT |
3.3/5 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
16 dB |
-40 Cel |
TIN |
e3 |
600 MHz |
4200 MHz |
||||||||
Renesas Electronics |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
5 |
DIP8,.3 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
BIPOLAR |
5 |
SL,8LEAD,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
80 mA |
5 |
QFL8,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
93 mA |
5 |
DIP8,.3 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
60 mA |
COMPONENT |
5 |
SSOP8,.2 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
100 MHz |
2000 MHz |
|||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
60 mA |
3 |
SSOP8,.2 |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
18 mA |
10 |
DIP8,.3 |
RF/Microwave Amplifiers |
70 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
22 mA |
5 |
SL,8LEAD,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
|||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
60 mA |
5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
BIPOLAR |
60 mA |
5 |
SL,8LEAD,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
|||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
18 mA |
10 |
SOP8,.25 |
RF/Microwave Amplifiers |
70 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
18 mA |
10 |
SOP8,.25 |
RF/Microwave Amplifiers |
70 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
200 mA |
3 |
SSOP8,.2 |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
CERAMIC |
HYBRID |
3.5 |
SOLCC8,.3 |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
MOS |
3 |
3.5 |
SOLCC8,.3,47 |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
93 mA |
5 |
SL,8LEAD,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
|||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
15 dBm |
60 mA |
COMPONENT |
+-5 |
QFL8,.15SQ |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
14 dB |
-50 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
50 MHz |
3000 MHz |
|||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HYBRID |
4.6 |
SOLCC8,.3 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
60 mA |
5 |
SSOP8,.2 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
49 mA |
5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Renesas Electronics |
NARROW BAND HIGH POWER |
8 |
PLASTIC/EPOXY |
HYBRID |
3.5 |
MODULE,8LEAD,.54 |
RF/Microwave Amplifiers |
||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
110 mA |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
101 mA |
COMPONENT |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
1500 MHz |
2500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
53 mA |
5 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin (Sn) |
e3 |
||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
126 mA |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
126 mA |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
23.8 mA |
COMPONENT |
3 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
101 mA |
COMPONENT |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
1500 MHz |
2500 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
1400 MHz |
3800 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.