Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
PHEMT |
1 |
17 dBm |
350 mA |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
50000 MHz |
95000 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
10 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
40 dBm |
COMPONENT |
50 ohm |
85 Cel |
15.7 dB |
-40 Cel |
2000 MHz |
22000 MHz |
|||||||||||||||||
|
Triquint Semiconductor |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
1 |
16 dBm |
390 mA |
COMPONENT |
11 |
LCC28,.24SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
30 MHz |
2200 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
300 MHz |
3000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
7 |
440 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
22000 MHz |
|||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
30 dBm |
COMPONENT |
50 ohm |
85 Cel |
19.4 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
1500 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
24 dBm |
117 mA |
COMPONENT |
5 |
TO-243 |
RF/Microwave Amplifiers |
8 dB |
Tin (Sn) |
e3 |
2000 MHz |
6000 MHz |
||||||||||
|
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
CERAMIC |
E-PHEMT |
1 |
25 dBm |
1.18 |
186 mA |
COMPONENT |
5 |
50 ohm |
105 Cel |
28.1 dB |
-55 Cel |
HIGH RELIABILITY |
400 MHz |
2200 MHz |
||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
15 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
HIGH RELIABILITY |
e4 |
0 MHz |
4000 MHz |
|||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
COMPONENT |
3/8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
15000 MHz |
||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
Sumitomo Electric Industries |
WIDE BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
HIGH RELIABILITY |
3400 MHz |
5000 MHz |
||||||||||||||||
|
Mini-circuits |
WIDE BAND MEDIUM POWER |
20 dBm |
1.22 |
COMPONENT |
50 ohm |
9.5 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
1000 MHz |
|||||||||||||||
Mini-circuits |
WIDE BAND MEDIUM POWER |
20 dBm |
1.22 |
COMPONENT |
50 ohm |
9.5 dB |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
50 MHz |
1000 MHz |
||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
3000 MHz |
4000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
LOW NOISE |
17000 MHz |
24000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
22000 MHz |
||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
2 |
130 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
24 dB |
-40 Cel |
2300 MHz |
5000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
69 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
105 Cel |
18.5 dB |
-40 Cel |
MATTE TIN |
e3 |
30 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
17000 MHz |
27000 MHz |
||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
Agilent Technologies |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
10.5 dB |
50 MHz |
7000 MHz |
|||||||||||||||||||
Qorvo |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
700 MHz |
1000 MHz |
||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
12000 MHz |
16000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
12000 MHz |
16000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
12000 MHz |
16000 MHz |
|||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
0 MHz |
22000 MHz |
||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
131 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
36.5 dB |
Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
|||||||
|
Microchip Technology |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
COMPONENT |
3.3 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-40 Cel |
Matte Tin (Sn) |
HIGH RELIABILITY, IT CAN ALSO OPERATE AT 4920 TO 5805 MHZ |
e3 |
2400 MHz |
2500 MHz |
||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
18 dBm |
COMPONENT |
8 dB |
0 MHz |
50000 MHz |
||||||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.3 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
6000 MHz |
|||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
|||||||||||||||||||||||||
|
Guerrilla Rf |
WIDE BAND MEDIUM POWER |
22 dBm |
2 |
COMPONENT |
50 ohm |
105 Cel |
17.5 dB |
-40 Cel |
50 MHz |
8000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
15 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
300 MHz |
3000 MHz |
||||||||||
Maxim Integrated |
WIDE BAND MEDIUM POWER |
13 dBm |
1.5 |
COMPONENT |
50 ohm |
85 Cel |
24 dB |
-40 Cel |
TIN LEAD |
e0 |
800 MHz |
1000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
13 dBm |
1.5 |
COMPONENT |
50 ohm |
85 Cel |
24 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
800 MHz |
1000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
30.2 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
30.2 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
30.2 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.