Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
195 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
16.6 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
3000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
195 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
16.6 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
3000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
COMPONENT |
19.5 dB |
400 MHz |
2700 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
31 dBm |
COMPONENT |
50 ohm |
16 dB |
Nickel/Palladium/Gold (Ni/Pd/Au) |
LOW NOISE |
e4 |
0 MHz |
4000 MHz |
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|
Mini-circuits |
WIDE BAND MEDIUM POWER |
10 dBm |
1.5 |
COAXIAL |
50 ohm |
65 Cel |
29 dB |
-20 Cel |
BNC |
5 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
18 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
27 dBm |
1.29 |
COMPONENT |
5 |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
20000 MHz |
44000 MHz |
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|
Diodes Incorporated |
WIDE BAND MEDIUM POWER |
MATTE TIN |
e3 |
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Mini-circuits |
WIDE BAND MEDIUM POWER |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
24000 MHz |
34000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
24000 MHz |
34000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
Tungsten/Nickel/Gold (W/Ni/Au) |
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|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
412 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
MATTE TIN |
e3 |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
4 |
GAN |
1 |
18 dBm |
3 |
COMPONENT |
20 |
DIE OR CHIP |
50 ohm |
23 dB |
28000 MHz |
38000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
20 dBm |
COMPONENT |
6 |
DIE OR CHIP |
RF/Microwave Amplifiers |
16 dB |
32000 MHz |
45000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.8 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
500 MHz |
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L-3 Narda-miteq |
WIDE BAND MEDIUM POWER |
2 |
COAXIAL |
32 dB |
SMA-F |
2000 MHz |
4000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
20 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
37000 MHz |
40000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
5 dBm |
650 mA |
COMPONENT |
5 |
LCC20,.16SQ,20 |
50 ohm |
105 Cel |
29.5 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
4900 MHz |
5900 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.3 dB |
-40 Cel |
50 MHz |
4000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
5 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
100 MHz |
4000 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
TIN |
e3 |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
18 dBm |
390 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
85 Cel |
24.7 dB |
-40 Cel |
MATTE TIN |
e3 |
1800 MHz |
2700 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
18000 MHz |
44000 MHz |
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Toshiba |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
1 |
15 dBm |
COMPONENT |
10,-5 |
FLNG,.53"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
9500 MHz |
12000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
250 mA |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
COMPONENT |
8 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
29.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5500 MHz |
8500 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
440 mA |
COMPONENT |
5 |
LCC22(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
700 MHz |
1000 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
415 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
23.5 dB |
TIN |
e3 |
1500 MHz |
2700 MHz |
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|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
6000 MHz |
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|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
COMPONENT |
85 Cel |
15 dB |
-40 Cel |
LOW NOISE |
400 MHz |
2700 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
8.2 dB |
1600 MHz |
2700 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Matte Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
|||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
5 dBm |
2 |
330 mA |
MODULE |
24 |
SOT-115J |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
33.5 dB |
-20 Cel |
5 MHz |
200 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
GAAS |
1 |
20 dBm |
7 |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
Gold (Au) |
e4 |
48000 MHz |
||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
138 mA |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
90 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
||||||
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
METAL |
HYBRID |
20 dBm |
1.5 |
440 mA |
COMPONENT |
28 |
MOT CASE 448-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-20 Cel |
800 MHz |
960 MHz |
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Motorola |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
5 dBm |
2 |
340 mA |
MODULE |
24 |
SOT-115J |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
33.5 dB |
-20 Cel |
LOW NOISE |
1 MHz |
250 MHz |
||||||||||
|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
1 |
15 dBm |
300 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
.25 MHz |
2500 MHz |
|||||||||||
|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
Gold (Au) |
HIGH RELIABILITY |
e4 |
100 MHz |
1000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.