Maxim Integrated RF & Microwave Amplifiers 201

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MAX3558CGI+

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

4

396 mA

COMPONENT

5

LCC28,.2SQ,20

75 ohm

RF/Microwave Amplifiers

70 Cel

4 dB

0 Cel

Matte Tin (Sn)

e3

50 MHz

878 MHz

MAX3516EUP+T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

195 mA

COMPONENT

5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

MATTE TIN

e3

5 MHz

65 MHz

MAX3517EEP-T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

5 MHz

65 MHz

MAX3516EUP

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

195 mA

COMPONENT

5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3514EEP-T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3524EUB-T

Maxim Integrated

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

7.6 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

44 MHz

880 MHz

MAX2654EXT+

Maxim Integrated

NARROW BAND LOW POWER

NICKEL GOLD PALLADIUM

MAX2251EBE

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

1.76

COMPONENT

3/5

BGA16,4X4,20

50 ohm

RF/Microwave Amplifiers

85 Cel

24.8 dB

-40 Cel

Tin/Lead (Sn63Pb37)

e0

824 MHz

849 MHz

MAX2130EUA

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

15 dBm

2

104 mA

COMPONENT

5

TSSOP8,.19

75 ohm

RF/Microwave Amplifiers

85 Cel

7.1 dB

-40 Cel

TIN LEAD

e0

44 MHz

878 MHz

MAX2648EBT-T10

Maxim Integrated

WIDE BAND LOW POWER

MAX2691LEWS+T10

Maxim Integrated

WIDE BAND LOW POWER

MAX2057ETX

Maxim Integrated

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

TIN LEAD

e0

1700 MHz

2500 MHz

MAX2247EBC+TW

Maxim Integrated

NARROW BAND MEDIUM POWER

MAX2267EUE+T

Maxim Integrated

NARROW BAND LOW POWER

6 dBm

2.5

COMPONENT

50 ohm

85 Cel

20.5 dB

-40 Cel

Matte Tin (Sn)

e3

887 MHz

925 MHz

MAX2242EBC

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BIPOLAR

10 dBm

2.5

COMPONENT

2.7/3.6

BGA12,3X4,20

50 ohm

RF/Microwave Amplifiers

70 Cel

25.5 dB

0 Cel

TIN LEAD

e0

2400 MHz

2500 MHz

MAX2130EUA-T

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

15 dBm

2

104 mA

COMPONENT

5

TSSOP8,.19

75 ohm

RF/Microwave Amplifiers

85 Cel

7.1 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

44 MHz

878 MHz

MAX2654EXT-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

5 dBm

9.2 mA

COMPONENT

2.7/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12.7 dB

-40 Cel

TIN LEAD

e0

1400 MHz

1700 MHz

MAX2653EUA

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

8.5 mA

COMPONENT

3

TSSOP8,.19

50 ohm

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

Tin/Lead (Sn85Pb15)

IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ

e0

1805 MHz

1880 MHz

MAX2242EBC+

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BIPOLAR

10 dBm

2.5

COMPONENT

2.7/3.6

BGA12,3X4,20

50 ohm

RF/Microwave Amplifiers

70 Cel

25.5 dB

0 Cel

Matte Tin (Sn)

e3

2400 MHz

2500 MHz

MAX2652EUB+

Maxim Integrated

NARROW BAND LOW POWER

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

MATTE TIN

IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ

e3

925 MHz

960 MHz

MAX2473EUT+

Maxim Integrated

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

6 dB

-40 Cel

MATTE TIN

e3

500 MHz

2500 MHz

MAX2269EUE-T

Maxim Integrated

NARROW BAND LOW POWER

6 dBm

2.5

COMPONENT

50 ohm

85 Cel

23.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

887 MHz

925 MHz

MAX2695EWS+T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BICMOS

1

5 dBm

COMPONENT

1.8/3.3

BGA4,2X2,16

50 ohm

RF/Microwave Amplifiers

85 Cel

10.9 dB

-40 Cel

TIN SILVER COPPER NICKEL

e2

MAX2245EBL

Maxim Integrated

NARROW BAND LOW POWER

10 dBm

6

COMPONENT

50 ohm

85 Cel

-40 Cel

TIN LEAD

e0

2400 MHz

2500 MHz

MAX2613ETA/V+T

Maxim Integrated

WIDE BAND LOW POWER

MAX2611EUS

Maxim Integrated

WIDE BAND LOW POWER

13 dBm

1.6

COMPONENT

50 ohm

85 Cel

17.3 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

0 MHz

1100 MHz

MAX2373EGC

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

850 MHz

940 MHz

MAX2645EUB-T

Maxim Integrated

NARROW BAND MEDIUM POWER

16 dBm

COMPONENT

50 ohm

85 Cel

12.9 dB

-40 Cel

TIN LEAD

e0

3400 MHz

3800 MHz

MAX2265EUE-T

Maxim Integrated

NARROW BAND LOW POWER

13 dBm

2.5

COMPONENT

50 ohm

85 Cel

24 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

824 MHz

849 MHz

MAX2633EUT-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

5 dBm

1.25

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2652

Maxim Integrated

NARROW BAND LOW POWER

Tin/Lead (Sn/Pb)

e0

925 MHz

1990 MHz

MAX2653EUA+

Maxim Integrated

NARROW BAND LOW POWER

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

MATTE TIN

IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ

e3

1805 MHz

1880 MHz

MAX2245EBL-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

9

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

6

208 mA

COMPONENT

3

BGA9,3X3,20

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn63Pb37)

e0

2400 MHz

2500 MHz

MAX2640AUT/V+T

Maxim Integrated

WIDE BAND LOW POWER

MATTE TIN

e3

MAX2631EUK-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

5 dBm

1.25

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2264EUE-T

Maxim Integrated

NARROW BAND LOW POWER

13 dBm

2.5

COMPONENT

50 ohm

85 Cel

23 dB

-40 Cel

Matte Tin (Sn)

e3

824 MHz

849 MHz

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

136 MHz

174 MHz

MAX2269EUE

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

6 dBm

2.5

100 mA

COMPONENT

2.7/4.5

TSSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

23.5 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

887 MHz

925 MHz

MAX2651

Maxim Integrated

NARROW BAND LOW POWER

Tin/Lead (Sn/Pb)

e0

925 MHz

1990 MHz

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

850 MHz

940 MHz

MAX2632EUK-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

5 dBm

1.25

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2267EUE

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

6 dBm

2.5

100 mA

COMPONENT

2.7/4.5

TSSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

20.5 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

887 MHz

925 MHz

MAX2649EBT-T

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

5 dBm

20 mA

COMPONENT

3/3.3

BGA6,2X3,20

50 ohm

RF/Microwave Amplifiers

85 Cel

15 dB

-40 Cel

Tin/Lead (Sn63Pb37)

e0

4900 MHz

5900 MHz

MAX2247EBC+T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

10

350 mA

COMPONENT

3

BGA12,3X4,20

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

2400 MHz

2500 MHz

MAX2247EBC-T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

10

350 mA

COMPONENT

3

BGA12,3X4,20

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

Tin/Lead (Sn63Pb37)

e0

2400 MHz

2500 MHz

MAX2233EEE-T

Maxim Integrated

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

Tin/Lead (Sn/Pb)

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e0

800 MHz

1000 MHz

MAX2640EUT

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

6.4 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.8 dB

-40 Cel

TIN LEAD

e0

400 MHz

1500 MHz

MAX2267EUE+

Maxim Integrated

NARROW BAND LOW POWER

6 dBm

2.5

COMPONENT

50 ohm

85 Cel

20.5 dB

-40 Cel

Matte Tin (Sn)

e3

887 MHz

925 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.