Maxim Integrated RF & Microwave Amplifiers 201

Reset All
Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MAX2640EUT-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

5.5 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.8 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

300 MHz

1500 MHz

MAX2232EEE

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

1.5

COMPONENT

3/5

SSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

23.9 dB

-40 Cel

TIN LEAD

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e0

800 MHz

1000 MHz

MAX2630EUS-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

5 dBm

1.25

COMPONENT

3

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2643EXT-T

Maxim Integrated

WIDE BAND LOW POWER

5 dBm

COMPONENT

50 ohm

85 Cel

14.5 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX9931EUA+T

Maxim Integrated

WIDE BAND LOW POWER

16 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

e3

2 MHz

1600 MHz

MAX2244EBL-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

9

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

6

205 mA

COMPONENT

3

BGA9,3X3,20

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn63Pb37)

e0

2400 MHz

2500 MHz

MAX2611EUS-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

13 dBm

1.6

COMPONENT

3.8

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

17.3 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

0 MHz

1100 MHz

MAX2235EUP-T

Maxim Integrated

WIDE BAND MEDIUM POWER

13 dBm

1.5

COMPONENT

50 ohm

85 Cel

24 dB

-40 Cel

TIN LEAD

e0

800 MHz

1000 MHz

MAX2642EXT-T

Maxim Integrated

WIDE BAND LOW POWER

5 dBm

COMPONENT

50 ohm

85 Cel

14.5 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2839ETN+

Maxim Integrated

NARROW BAND LOW POWER

MATTE TIN

e3

MAX2839ETN+T

Maxim Integrated

NARROW BAND LOW POWER

MATTE TIN

e3

MAX2839ETN+TD

Maxim Integrated

NARROW BAND LOW POWER

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

LOW NOISE

2300 MHz

2700 MHz

MAX3510EEP+

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

126 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

26 dB

-40 Cel

MATTE TIN

e3

5 MHz

65 MHz

MAX3514EEP

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3514EEP+

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

MATTE TIN

e3

5 MHz

65 MHz

MAX3524EUB

Maxim Integrated

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

7.6 dB

-40 Cel

TIN LEAD

e0

44 MHz

880 MHz

MAX3516EUP+

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

195 mA

COMPONENT

5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

MATTE TIN

e3

5 MHz

65 MHz

MAX3538UTC

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

9.7 dB

0 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

50 MHz

878 MHz

MAX3509EUP+T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

115 mA

COMPONENT

8.5/9.5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Matte Tin (Sn)

e3

5 MHz

65 MHz

MAX3517EEP+

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin (Sn)

e3

5 MHz

65 MHz

MAX3538UTC-T

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

9.7 dB

0 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

50 MHz

878 MHz

MAX3516EUP-T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

195 mA

COMPONENT

5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3517EEP

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3558CTI+T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

4

396 mA

COMPONENT

5

LCC28,.2SQ,20

75 ohm

RF/Microwave Amplifiers

70 Cel

4 dB

0 Cel

Matte Tin (Sn)

e3

50 MHz

878 MHz

MAX3510EEP+T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

126 mA

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

26 dB

-40 Cel

MATTE TIN

e3

5 MHz

65 MHz

MAX3538UTC+

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

9.7 dB

0 Cel

MATTE TIN

LOW NOISE

e3

50 MHz

878 MHz

MAX3558CTI+

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

4

396 mA

COMPONENT

5

LCC28,.2SQ,20

75 ohm

RF/Microwave Amplifiers

70 Cel

4 dB

0 Cel

MATTE TIN

e3

50 MHz

878 MHz

MAX3537UTC

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

7.7 dB

0 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

50 MHz

878 MHz

MAX3537UTC+

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

7.7 dB

0 Cel

MATTE TIN

LOW NOISE

e3

50 MHz

878 MHz

MAX3505EGP

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

20

CERAMIC

1

335 mA

COMPONENT

5

LCC20,.20SQ,25

75 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3509EUP+

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

115 mA

COMPONENT

8.5/9.5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

MATTE TIN

e3

5 MHz

65 MHz

MAX3524EUB+

Maxim Integrated

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

7.6 dB

-40 Cel

MATTE TIN

e3

44 MHz

880 MHz

MAX3509EUP-T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

115 mA

COMPONENT

8.5/9.5

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3558CGI

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

4

396 mA

COMPONENT

5

LCC28,.2SQ,20

75 ohm

RF/Microwave Amplifiers

70 Cel

4 dB

0 Cel

Tin/Lead (Sn85Pb15)

e0

50 MHz

878 MHz

MAX3509EUP

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

115 mA

COMPONENT

9

TSSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3510EEP

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

BIPOLAR

126 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

26 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3558CGI+T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

4

396 mA

COMPONENT

5

LCC28,.2SQ,20

75 ohm

RF/Microwave Amplifiers

70 Cel

4 dB

0 Cel

Matte Tin (Sn)

e3

50 MHz

878 MHz

MAX3537UTC+T

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

7.7 dB

0 Cel

Matte Tin (Sn)

LOW NOISE

e3

50 MHz

878 MHz

MAX3524EUB+T

Maxim Integrated

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

7.6 dB

-40 Cel

Tin (Sn)

e3

44 MHz

880 MHz

MAX3510EEP-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

126 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

26 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3537UTC-T

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

7.7 dB

0 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

50 MHz

878 MHz

MAX3558CGI-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

4

396 mA

COMPONENT

5

LCC28,.2SQ,20

75 ohm

RF/Microwave Amplifiers

70 Cel

4 dB

0 Cel

Tin/Lead (Sn/Pb)

e0

50 MHz

878 MHz

MAX3517EEP+T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Matte Tin (Sn)

e3

5 MHz

65 MHz

MAX3503EGP

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

BIPOLAR

1

287 mA

COMPONENT

3.3

LCC20,.20SQ,25

75 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

5 MHz

65 MHz

MAX3514EEP+T

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

150 mA

COMPONENT

5

SSOP20,.25

75 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Matte Tin (Sn)

e3

5 MHz

65 MHz

MAX3505EGP-T

Maxim Integrated

NARROW BAND LOW POWER

COMPONENT

75 ohm

85 Cel

8 dB

-40 Cel

5 MHz

65 MHz

MAX3538UTC+T

Maxim Integrated

WIDE BAND LOW POWER

14 dBm

COMPONENT

75 ohm

85 Cel

9.7 dB

0 Cel

Matte Tin (Sn)

LOW NOISE

e3

50 MHz

878 MHz

MAX3503EGP-T

Maxim Integrated

NARROW BAND LOW POWER

COMPONENT

75 ohm

85 Cel

8 dB

-40 Cel

5 MHz

65 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.