Maxim Integrated RF & Microwave Amplifiers 201

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2654EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		9.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12.7 dB	-40 Cel	NICKEL GOLD PALLADIUM			1400 MHz	1700 MHz
MAX2631EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz
MAX2838ETM+	Maxim Integrated	NARROW BAND LOW POWER																	MATTE TIN		e3
MAX2687EWS+T10	Maxim Integrated		SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1					1.8/3.3	BGA4,2X2,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2373EGC+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN		e3	850 MHz	940 MHz
MAX2246EBL	Maxim Integrated	NARROW BAND LOW POWER						10 dBm	6		COMPONENT			50 ohm		85 Cel		-40 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2267EUE-T	Maxim Integrated	NARROW BAND LOW POWER						6 dBm	2.5		COMPONENT			50 ohm		85 Cel	20.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	887 MHz	925 MHz
MAX2242EBC+TW	Maxim Integrated	NARROW BAND MEDIUM POWER						10 dBm	2.5		COMPONENT			50 ohm		70 Cel	25.5 dB	0 Cel				2400 MHz	2500 MHz
MAX2651EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.