Maxim Integrated - MAX3510EEP+

Mitsubishi Electric's RA07H4047M-501 is a 50 ohm hybrid module with narrow band high power RF/Microwave device type. It offers 25.22 dB gain, operates b/w 400-470 MHz frequencies, and handles up to 14.77 dBm input power. Ideal for applications requiring high-power amplification in the RF & Microwave domain.

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.

ADA-4643-BLKG by Broadcom is a wide band low power RF amplifier with 15.5 dB gain, operating from 0-2500 MHz. It features a max input power of 18 dBm and VSWR of 1.6, suitable for RF & microwave applications requiring high performance in plastic/epoxy package.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

Analog Devices' HMC505LP4ETR is a RF amplifier with 24 terminals, operating from -40°C to 85°C. It features a narrow band low power design, powered by 3V supply. Ideal for surface mount applications in RF and microwave systems.

Analog Devices' HMC451LC3TR is a wide band low power RF amplifier with 14 dB gain, operating from 5-20 GHz. It features a max input power of 10 dBm and operates in temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact ceramic package.

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

Mini-circuits' PGA-103+ is a wideband low-power RF amplifier with 14.7 dB gain, operating from 50 MHz to 4 GHz. It can handle up to 26 dBm CW input power and has a temperature range of -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

NARROW BAND HIGH POWER;

NARROW BAND HIGH POWER;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Maximum Input Power (CW): 20 dBm; Gain: 18 dB; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Construction: COMPONENT;

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;