RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8205BF10	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm		85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL		e4	300 MHz	6000 MHz
HMC994APM5E	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm	7		COMPONENT			50 ohm		85 Cel	13 dB	-40 Cel				0 MHz	28000 MHz
HMC1082LP4ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
MGA-62563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	3000 MHz
MGA-62563-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	3000 MHz
BGA616H6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel	TIN		e3	0 MHz	2700 MHz
HMC441LC3B	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	GOLD		e4	6000 MHz	18000 MHz
HMC1082LP4E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN		e3	5500 MHz	18000 MHz
MGA-82563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.2	101 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	8.8 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	100 MHz	6000 MHz
TCBT-14+	Mini-circuits	WIDE BAND LOW POWER						30 dBm	1.5		COMPONENT			50 ohm		85 Cel		-40 Cel	GOLD OVER NICKEL		e4	10 MHz	10000 MHz
BGU8052X	NXP Semiconductors	WIDE BAND LOW POWER
BGU8007,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			14.7 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
HMC8411LP2FETR	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
TGA2214	Qorvo	WIDE BAND HIGH POWER						31 dBm			COMPONENT			50 ohm		85 Cel	22 dB	-40 Cel				2000 MHz	18000 MHz
BGA715N7E6327XTSA2	Infineon Technologies	NARROW BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel	TIN	LOW NOISE	e3	1550 MHz	1615 MHz
MAAL-010704-TR3000	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	24 dBm		75 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	95 Cel	10 dB	-40 Cel	MATTE TIN		e3	100 MHz	3500 MHz
MGA-61563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	18 dBm	2	48 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		6.9 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
HMC952ALP5GETR	Analog Devices	WIDE BAND MEDIUM POWER						24 dBm			COMPONENT			50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
HMC564LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	20 dBm		75 mA	COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD NICKEL		e4	7000 MHz	14000 MHz
HMC788ALP2ETR	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
MAX2640EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	300 MHz	1500 MHz
MAX2640EUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	300 MHz	1500 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
SMA3107-TL-E	Onsemi	WIDE BAND LOW POWER																	TIN BISMUTH		e6
ADL8107ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	22 dBm	1.54		COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	18 dB	-40 Cel				6000 MHz	18000 MHz
HMC441LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	6500 MHz	13500 MHz
HMC608LC4	Analog Devices	WIDE BAND MEDIUM POWER						10 dBm			COMPONENT			50 ohm		85 Cel	27 dB	-40 Cel	TUNGSTEN NICKEL GOLD			9500 MHz	11500 MHz
HMC960LP4ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
HMC451LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	18000 MHz
CMPA901A035F1	Wolfspeed	WIDE BAND HIGH POWER
HMC635LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	70 Cel		-55 Cel
XF1001-SC-0G00	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER						24 dBm			COMPONENT					85 Cel	10.1 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	6000 MHz
RF3827	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	20	130 mA	COMPONENT	8	LCC16,.12SQ,20	75 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN		e3	5 MHz	1500 MHz
MD7IC2012GNR1,528	NXP Semiconductors	NARROW BAND HIGH POWER
MW7IC2220NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
CMPA901A035F	Wolfspeed	WIDE BAND HIGH POWER
HMC311SC70ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	8000 MHz
HMC451LC3TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel				5000 MHz	20000 MHz
MGA-81563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
HMC8412LP2FETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
935363184528	NXP Semiconductors	WIDE BAND LOW POWER																	Tin (Sn)		e3
935373852528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	Tin (Sn)		e3	3200 MHz	4000 MHz
MMG20241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB		MATTE TIN		e3	450 MHz	3800 MHz
RF5110G	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	10		COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 800 TO 950 MHZ	e3	880 MHz	915 MHz
HMC1040LP3CETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	5 dBm		85 mA	COMPONENT	2.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				24000 MHz	43500 MHz
TQP3M9035	Qorvo	WIDE BAND MEDIUM POWER						23 dBm			COMPONENT			50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
A33	TE Connectivity			4	METAL		1			16 mA		15	CAN4,.3		RF/Microwave Amplifiers	50 Cel		0 Cel
BGA420H6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		150 Cel	11 dB	-65 Cel	TIN		e3	100 MHz	1800 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.