Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
NICKEL PALLADIUM GOLD |
e4 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
14 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
1.6 mA |
COMPONENT |
0.8,1.8/2.85 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
GAAS |
1 |
20 dBm |
75 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
GOLD NICKEL |
HIGH RELIABILITY |
e4 |
3500 MHz |
8000 MHz |
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Mini-circuits |
WIDE BAND LOW POWER |
13 dBm |
1.6 |
COMPONENT |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
USABLE TO 10 GHZ |
e0 |
0 MHz |
8000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.5 |
LCC4(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.5 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
8000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
2.1 |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
9.2 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
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Rf Micro Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
0 MHz |
5500 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
E-PHEMT |
1 |
8 dBm |
105 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
500 MHz |
5000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
1.38 |
COMPONENT |
2 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
23000 MHz |
31000 MHz |
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|
Broadcom |
NARROW BAND MEDIUM POWER |
COAXIAL |
0 MHz |
2400 MHz |
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|
Wolfspeed |
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Wolfspeed |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PHEMT |
1 |
18 dBm |
1.25 |
84 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
24 dB |
-55 Cel |
LOW NOISE |
12000 MHz |
17000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
200 MHz |
4000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
3 |
LCC8,.08SQ,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
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|
Microchip Technology |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
COMPONENT |
3.3 |
LCC12,.08SQ,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-40 Cel |
MATTE TIN |
HIGH RELIABILITY |
e3 |
2412 MHz |
2484 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
10 dBm |
75 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
GOLD NICKEL |
e4 |
6000 MHz |
20000 MHz |
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Agilent Technologies |
WIDE BAND LOW POWER |
20 dBm |
2.1 |
COMPONENT |
50 ohm |
9.2 dB |
Tin/Lead (Sn/Pb) |
e0 |
100 MHz |
6000 MHz |
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Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
2.1 |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.2 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
100 MHz |
6000 MHz |
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|
Skyworks Solutions |
NARROW BAND LOW POWER |
SURFACE MOUNT |
4 |
BICMOS |
1 |
0 dBm |
1.5 |
5 mA |
COMPONENT |
1.8/2.8 |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
1559 MHz |
1606 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAN |
1 |
24 dBm |
3 |
COMPONENT |
LCC20,.16SQ,20 |
50 ohm |
24 dB |
2000 MHz |
6000 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
29 dBm |
COMPONENT |
18 dB |
5900 MHz |
8500 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
6 dBm |
100 mA |
COMPONENT |
4 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
Gold (Au) |
LOW NOISE |
e4 |
24000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
34 dBm |
4 |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
55 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
7000 MHz |
15000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
PHEMT |
1 |
0 dBm |
1.92 |
65 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
6000 MHz |
26500 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
GAN |
1 |
25 dBm |
10 |
400 mA |
MODULE |
-2.8,28 |
50 ohm |
26 dB |
2000 MHz |
6000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
18 dB |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
6000 MHz |
20000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
13 dBm |
78 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
10 MHz |
6000 MHz |
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|
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.22 |
525 mA |
COMPONENT |
12 |
SOP16,.4 |
75 ohm |
RF/Microwave Amplifiers |
9.5 dB |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
1000 MHz |
|||||||
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.22 |
525 mA |
COMPONENT |
12 |
SOP16,.4 |
75 ohm |
RF/Microwave Amplifiers |
9.5 dB |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
50 MHz |
1000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
8000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
21000 MHz |
32000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
7800 MHz |
8700 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Frequency Multipliers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
8000 MHz |
21000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
22 |
PHEMT |
1 |
50 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
85 Cel |
19.5 dB |
-55 Cel |
71000 MHz |
86000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
22000 MHz |
||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
|||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
82 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
17.5 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.